DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ166
NPN video transistor
Product specification
Supersedes data of November 1995
File under Discrete Semiconductors, SC05
1997 Oct 02
Philips Semiconductors
Product specification
NPN video transistor
FEATURES
•Low
output capacitance
•
High gain bandwidth
•
Good thermal stability
•
Gold metallization ensures
excellent reliability
•
High current applicability
•
Surface mounting.
APPLICATIONS
•
Video amplifier cascode driver in
high-resolution colour graphics
monitors.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CER
I
C
P
tot
h
FE
f
T
Note
1. T
s
is the temperature at the soldering point of the collector lead.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
CER
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector lead.
PARAMETER
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
T
s
≤
105
°C;
note 1; see Fig.3
open emitter
open base
R
BE
= 100
Ω
open collector
CONDITIONS
MIN.
−
−
−
−
−
−
−65
−
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
T
s
≤
105
°C;
note 1
I
C
= 300 mA; V
CE
= 5 V; see Fig.4
I
C
= 300 mA; V
CE
= 5 V; f = 100 MHz;
T
amb
= 25
°C
open emitter
R
BE
= 100
Ω
CONDITIONS
MIN.
−
−
−
−
50
1
TYP.
−
−
−
−
60
−
PINNING
PIN
1
2
3
4
base
emitter
collector
Fig.1
DESCRIPTION
emitter
1
Top view
BFQ166
DESCRIPTION
NPN video transistor in a SOT223
plastic package.
page
4
2
3
MSB002 - 1
Simplified outline
(SOT223).
MAX.
20
19
500
2
−
−
UNIT
V
V
mA
W
GHz
MAX.
20
10
19
3
500
2
+150
175
UNIT
V
V
V
V
mA
W
°C
°C
1997 Oct 02
2
Philips Semiconductors
Product specification
NPN video transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Notes
1. T
s
is the temperature at the soldering point of the collector lead.
2. Device mounted on a printed-circuit board measuring 40
×
40
×
1 mm (collector pad 35
×
17 mm).
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)CBO
V
(BR)CER
V
(BR)CEO
I
CES
h
FE
C
c
C
cb
f
T
PARAMETER
collector-base breakdown voltage
collector-emitter breakdown voltage
collector-emitter breakdown voltage
collector-emitter cut-off current
DC current gain
collector capacitance
collector-base capacitance
transition frequency
CONDITIONS
I
C
= 5 mA; I
E
= 0
I
C
= 10 mA; R
BE
= 100
Ω
I
C
= 10 mA; I
B
= 0
V
CE
= 10 V; V
BE
= 0
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= i
c
= 0; V
CB
= 5 V; f = 1 MHz;
see Fig.6
I
C
= 300 mA; V
CE
= 5 V;
f = 100 MHz; T
amb
= 25
°C;
see Fig.5
MIN.
20
19
10
−
−
−
1
TYP.
−
−
−
−
60
4.5
3.2
−
PARAMETER
thermal resistance from junction to soldering point
CONDITIONS
T
s
= 105
°C;
P
tot
= 2 W;
notes 1 and 2
BFQ166
VALUE
35
UNIT
K/W
MAX.
−
−
−
100
−
−
−
−
UNIT
V
V
V
µA
pF
pF
GHz
I
C
= 300 mA; V
CE
= 5 V; see Fig.4 50
1997 Oct 02
3
Philips Semiconductors
Product specification
NPN video transistor
BFQ166
MRA601
600
handbook, halfpage
IC
(mA)
400
handbook, halfpage
3
MRA600
Ptot
(W)
2
200
1
0
0
0
5
10
15
VCER (V)
20
0
50
100
150
Ts (
o
C)
200
R
BE
≤
100
Ω.
Fig.2 DC SOAR.
Fig.3 Power derating curve.
handbook, halfpage
80
MBB436
handbook, halfpage
3
MBB435
hFE
70
fT
(GHz)
2
60
1
50
40
0
200
400
IC (mA)
600
0
0
100
200
IC (mA)
300
V
CE
= 5 V.
V
CE
= 5 V; T
amb
= 25
°C.
Fig.4
DC current gain as a function of
collector current; typical values.
Fig.5
Transition frequency as a function of
collector current; typical values.
1997 Oct 02
4
Philips Semiconductors
Product specification
NPN video transistor
BFQ166
MRA599
handbook,
10
halfpage
Ccb
(pF)
8
6
4
2
0
0
4
8
12
16
20
VCB (V)
I
C
= 0; f = 1 MHz.
Fig.6
Collector-base capacitance as a function of
collector-base voltage; typical values.
1997 Oct 02
5
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