DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ225
NPN video transistor
Product specification
Supersedes data of 1996 July 18
File under Discrete Semiconductors, SC05
1996 Sep 04
Philips Semiconductors
Product specification
NPN video transistor
APPLICATIONS
•
Primarily intended for cascode
output and buffer stages in high
resolution colour monitors.
DESCRIPTION
NPN silicon transistor encapsulated
in a 3-lead plastic SOT128B package.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
collector
base
Fig.1 Simplified outline SOT128B.
1
2
3
MGA323
BFQ225
handbook, halfpage
QUICK REFERENCE DATA
SYMBOL
V
CBO
I
C
P
tot
f
T
C
re
T
j
PARAMETER
collector-base voltage
collector current (DC)
total power dissipation
transition frequency
feedback capacitance
junction temperature
T
mb
= 25
°C
I
C
= 25 mA; V
CE
= 10 V
I
C
= 0; V
CB
= 10 V
CONDITIONS
open emitter
−
−
−
1
1.7
−
TYP.
MAX.
100
100
3.75
−
−
175
V
mA
W
GHz
pF
°C
UNIT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CER
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
R
BE
= 100
Ω
open collector
see Fig.2
see Fig.2
T
mb
= 25
°C;
see Fig.3
−
−
−
−
−
−
−65
−
MIN.
MAX.
100
95
3
100
100
3.75
+175
175
V
V
V
mA
mA
W
°C
°C
UNIT
1996 Sep 04
2
Philips Semiconductors
Product specification
NPN video transistor
BFQ225
10
3
handbook, halfpage
MBG486
handbook, halfpage
4
MBG487
Ptot
(W)
IC
(mA)
3
10
2
2
1
10
10
10
2
VCE (V)
10
3
0
0
100
Tmb (
o
C)
200
T
mb
= 25
°C.
V
CE
≤
50 V.
Fig.2 DC SOAR.
Fig.3 Power derating curve.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
PARAMETER
thermal resistance from junction to
mounting base
CONDITIONS
P
tot
= 3.75 W; T
mb
= 25
°C
VALUE
40
UNIT
K/W
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)CBO
V
(BR)CER
V
(BR)EBO
I
CES
h
FE
f
T
C
re
PARAMETER
collector-base breakdown voltage
emitter-base breakdown voltage
collector-emitter leakage current
DC current gain
transition frequency
feedback capacitance
CONDITIONS
I
C
= 0.1 mA; I
E
= 0
I
C
= 0; I
E
= 0.1 mA
V
CE
= 50 V; V
BE
= 0
I
C
= 25 mA; V
CE
= 10 V;
see Fig.4
I
C
= 25 mA; V
CE
= 10 V;
f = 500 MHz; see Fig.5
I
C
= 0; V
CB
= 10 V; f = 1 MHz;
see Fig.6
MIN.
100
95
3
−
20
−
−
−
−
−
−
−
1
1.7
TYP.
MAX.
−
−
−
100
−
−
−
GHz
pF
UNIT
V
V
V
µA
collector-emitter breakdown voltage I
C
= 1 mA; R
BE
= 100
Ω
1996 Sep 04
3
Philips Semiconductors
Product specification
NPN video transistor
BFQ225
handbook, halfpage
60
MBG488
handbook, halfpage
1.2
MBG489
hFE
fT
(MHz)
0.8
40
20
0.4
0
0
20
40
60
80
100
IC (mA)
0
10
20
50
IC (mA)
10
2
V
CE
= 10 V; t
p
= 500
µs.
V
CE
= 10 V; f = 500 MHz.
Fig.4
DC current gain as a function of collector
current; typical values.
Fig.5
Transition frequency as a function of
collector current; typical values.
handbook, halfpage
4
MBG490
Cre
(pF)
3
2
1
0
0
2
4
6
8
10
VCB (V)
f = 1 MHz.
Fig.6
Feedback capacitance as a function of
collector-base voltage; typical values.
1996 Sep 04
4
Philips Semiconductors
Product specification
NPN video transistor
PACKAGE OUTLINE
BFQ225
handbook, full pagewidth
10.4 max
3.8
3.6
3.8
0.56 max
24.2
max
8.6
max
2.5 max
(1)
2.4 max
12.2
min
1
2
3
0.8 (3x)
0.6
2.54
2.54
0.65 max
1.6
4.6
max
10
MGA322
Dimensions in mm.
Fig.7 SOT128B.
1996 Sep 04
5
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