BGD506 datasheet, PDF - EEWORLD Datasheet

BGD506: DescriptionRF/Microwave Amplifier, 40 MHz - 550 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, SOT115J, 9 PIN; CategoryWireless rf/communication Radio frequency and microwave; File Size51KB，2 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BGD506 Overview

RF/Microwave Amplifier, 40 MHz - 550 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, SOT115J, 9 PIN

Parameter Name	Attribute value
Maker	NXP
Reach Compliance Code	unknown
Other features	LOWNOISE
Characteristic impedance	75 Ω
structure	MODULE
Gain	22.1 dB
Maximum input power (CW)	16.25 dBm
Maximum operating frequency	550 MHz
Minimum operating frequency	40 MHz
Maximum operating temperature	100 °C
Minimum operating temperature	-20 °C
RF/Microwave Device Types	WIDE BAND HIGH POWER

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