BGD816 datasheet, PDF - EEWORLD Datasheet

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BGD816: DescriptionRF/Microwave Amplifier, 40 MHz - 870 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, SOT115J, 9 PIN; CategoryWireless rf/communication Radio frequency and microwave; File Size282KB，2 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BGD816 Overview

RF/Microwave Amplifier, 40 MHz - 870 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, SOT115J, 9 PIN

BGD816 Parametric

Parameter Name	Attribute value
Maker	NXP
Reach Compliance Code	unknown
Other features	LOW NOISE, HIGH RELIABILITY
Characteristic impedance	75 Ω
structure	MODULE
Gain	22 dB
Maximum operating frequency	870 MHz
Minimum operating frequency	40 MHz
Maximum operating temperature	100 °C
Minimum operating temperature	-20 °C
RF/Microwave Device Types	WIDE BAND HIGH POWER

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NXP CATV

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As the number-one supplier of CATV hybrid products, NXP Semiconductors provides the broadest range of choices for all

network bandwidths. We support 500, 600, 750, and 870 MHz in analog or digital applications. For 1-GHz applications, our

high-performance GaAs devices provide the increased capacity needed for high-end services like HDTV, VoIP, and digital

simulcasting. And, of course, they’re all backed by our world-class technical support services.

CATV 1-GHz power doublers

Gain (dB)

NXP

GaAs

17.5–19.5

19.5–21.5

21.5–23.5

23.5–25.5

Coming soon

CGD1042

CGD1042H

CGD1044

CGD1044H

MHW10247AN

MHW10188AN

Freescale

CATV 1-GHz push-pull

Gain(dB)

NXP

17.5–19.5 BGY1085A MHW9182CN

21.5–23.5

23.5–25.5

27–29

Freescale

NXP

GaAs

MHW10186N

Coming soon MHW10236N

Coming soon

Coming soon MHW10276N

Freescale

CATV 870-MHz power doublers

Gain (dB)

NXP

17.5–19.5

BGD812

MHW8185L

MHW8185

MHW8188AN

MHW9187N

MHW9188AN

MHW9188N

MHW9189AN

MHW8227AN

MHW9227AN

MHW8247AN

MHW9247AN

MHW9247N

Freescale

NXP

Freescale

GaAs

CATV 870-MHz push pull

Gain(dB)

NXP

17.5–19.5

19.5–21.5

21.5–23.5

23.5–25.5

27–29

BGY887B

BGY888

BGY835C

BGY885A

BGY885B

BGY887

MHW8222BN

MHW8242AN

MHW8272AN

MHW8342N

CGY887

CGY887A

CGY887B

CGY888

MHW9276N

MHW8182CN

Freescale

NXP

Freescale

GaAs

MHW9186AN

MHW9186N

MHW9206N

MHW9236N

19.5–21.5

BGD814

MHW8205L

MHW8205

CGD914

21.5–23.5

BGD816

CGD942C

23.5–25.5

CGD944C

BGD816 Related Products

	BGD816	BGY785AD	CGY887	MHW10247AN	MHW8205
Description	RF/Microwave Amplifier, 40 MHz - 870 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, SOT115J, 9 PIN	RF/Microwave Amplifier, 40 MHz - 750 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER, SOT115J, 9 PIN	RF/Microwave Amplifier, 40 MHz - 870 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, SOT-115J, 9 PIN	40MHz - 1000MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, ROHS COMPLIANT, CASE 1302-01, 7 PIN	40MHz - 860MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, CASE 714Y-04, 7 PIN
Reach Compliance Code	unknown	unknown	unknown	compliant	not_compliant
Characteristic impedance	75 Ω	75 Ω	75 Ω	75 Ω	75 Ω
structure	MODULE	MODULE	COMPONENT	MODULE	MODULE
Gain	22 dB	18.5 dB	22 dB	24.8 dB	20 dB
Maximum operating frequency	870 MHz	750 MHz	870 MHz	1000 MHz	860 MHz
Minimum operating frequency	40 MHz	40 MHz	40 MHz	40 MHz	40 MHz
Maximum operating temperature	100 °C	100 °C	100 °C	100 °C	100 °C
Minimum operating temperature	-20 °C	-20 °C	-20 °C	-20 °C	-20 °C
RF/Microwave Device Types	WIDE BAND HIGH POWER	WIDE BAND MEDIUM POWER	WIDE BAND HIGH POWER	WIDE BAND HIGH POWER	WIDE BAND HIGH POWER
Maker	NXP	NXP	-	NXP	NXP
package instruction	-	SOT-115J	SOT-115J	-	MOT CASE 714Y-02
Package body material	-	METAL	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Encapsulate equivalent code	-	SOT-115J	SOT-115J	-	MOT CASE 714Y-02
power supply	-	24 V	24 V	-	24 V
Maximum slew rate	-	265 mA	250 mA	-	435 mA
technology	-	HYBRID	HYBRID	-	HYBRID
Is it Rohs certified?	-	-	conform to	conform to	incompatible

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