DISCRETE SEMICONDUCTORS
DATA SHEET
M3D390
BLF1047
UHF power LDMOS transistor
Preliminary specification
2001 Mar 22
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
FEATURES
•
High power gain
•
Easy power control
•
Excellent ruggedness
•
Source on underside eliminates DC isolators, reducing
common mode inductance
•
Designed for broadband operation (800 MHz to 1 GHz).
handbook, halfpage
BLF1047
PINNING - SOT541A
PIN
1
2
3
drain
gate
source, connected to flange
DESCRIPTION
APPLICATIONS
•
Communication transmitter applications in the UHF
frequency range.
1
3
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT541A) with a ceramic cap. The common source is
connected to the mounting flange.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°C
in the common source broadband test circuit.
MODE OF OPERATION
CW, class-AB (2-tone)
CW, class-AB (1-tone)
f
(MHz)
f
1
= 960; f
2
= 960.1
960
V
DS
(V)
26
26
P
L
(W)
70 (PEP)
70
G
p
(dB)
>14
>14
Top view
2
MBK765
Fig.1 Simplified outline.
η
D
(%)
>35
>45
d
im
(dBc)
≤−26
−
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
DS
V
GS
I
D
T
stg
T
j
drain-source voltage
gate-source voltage
drain current (DC)
storage temperature
junction temperature
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
PARAMETER
−
−
−
−65
−
MIN.
MAX.
65
±20
9
+150
200
V
V
A
°C
°C
UNIT
2001 Mar 22
2
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-h
Note
PARAMETER
thermal resistance from junction to heatsink
CONDITIONS
T
h
= 25
°C,
P
dis
= 100 W;
note 1
BLF1047
VALUE
1.15
UNIT
K/W
1. Determined under specified RF operating conditions, based on maximum peak junction temperature.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
is
C
os
C
rs
PARAMETER
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
input capacitance
output capacitance
feedback capacitance
CONDITIONS
V
GS
= 0; I
D
= 1.4 mA
V
DS
= 10 V; I
D
= 140 mA
V
GS
= 0; V
DS
= 26 V
V
GS
= V
GSth
+ 9 V; V
DS
= 10 V
V
GS
=
±20
V; V
DS
= 0
V
DS
= 10 V; I
D
= 5 A
V
GS
= V
GSth
+ 9 V; I
D
= 5 A
V
GS
= 0; V
DS
= 26 V; f = 1 MHz
V
GS
= 0; V
DS
= 26 V; f = 1 MHz
V
GS
= 0; V
DS
= 26 V; f = 1 MHz
MIN.
65
4
−
18
−
−
−
−
−
−
TYP.
−
−
−
−
−
3
200
75
65
2.5
MAX.
−
5
2
−
250
−
−
−
−
−
UNIT
V
V
µA
A
nA
S
mΩ
pF
pF
pF
APPLICATION INFORMATION
RF performance in the common source class-AB broadband test circuit. T
h
= 25
°C;
R
th j-h
= 1.15 K/W,
unless otherwise specified.
MODE OF OPERATION
CW, class-AB (2-tone)
CW, class-AB (1-tone)
f
(MHz)
f
1
= 960; f
2
= 960.1
960
V
DS
(V)
26
26
P
L
(W)
70 (PEP)
70
G
p
(dB)
>14
>14
η
D
(%)
>35
>45
d
im
(dBc)
≤−26
−
Ruggedness in class-AB operation
The BLF1047 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: V
DS
= 26 V; f = 960 MHz at rated load power.
Tuning Procedure
For high gain and efficiency:
In CW mode (P
D
= 1 W; f = 960 MHz) tune C8 (see Figs. 14 and 15) until IRL <
−15
dB, then adjust C14 and C15 for high
gain until G
P
> 14 dB at P
L
= 80 W.
For linear mode:
Tune for high gain and efficiency mode, then apply two tone signal (f
1
= 960 MHz; f
2
= 960.1 MHz) at P
L
= 70 W (PEP)
and tune first C8 and then C14 and C15 for lowest d
3
(below
−28
dBc).
2001 Mar 22
3
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF1047
25
G
P
(dB)
20
G
P
80
η
D
(%)
60
20
G
P
(dB)
G
P
60
η
D
(%)
15
η
D
40
15
η
D
40
10
20
10
20
5
0
20
40
60
80
P
L
(W)
0
100
5
0
40
80
0
120
P
L
(PEP) (W)
V
DS
= 26 V; I
DQ
= 500 mA; T
h
≤
25
°
C;
f = 960 MHz; tuned for high efficiency; see tuning procedure.
V
DS
= 26 V; I
DQ
= 500 mA; T
h
≤
25
°
C; f
1
= 960 MHz; f
2
= 960.1 MHz;
tuned for high linearity; see tuning procedure
Fig.2
Power gain and drain efficiency as functions
of the load power; typical values.
Fig.3
Power gain and drain efficiency as functions
of peak envelope power; typical values.
0
d
3
(dBc)
-20
0
d
5
(dBc)
-20
-40
I
DQ
=560mA
I
DQ
=500mA
I
DQ
=450mA
-40
I
DQ
=560mA
-60
-60
I
DQ
=500mA
I
DQ
=450mA
-80
0
20
40
60
80
100
P
L
(PEP) (W)
-80
0
20
40
60
80
100
P
L
(PEP) (W)
V
DS
= 26 V; T
h
≤
25
°
C; f
1
= 960 MHz; f
2
= 960.1 MHz
tuned for high linearity; see tuning procedure.
V
DS
= 26 V; T
h
≤
25
°
C; f
1
= 960 MHz; f
2
= 960.1 MHz
tuned for high linearity; see tuning procedure.
Fig.4
Third order intermodulation distortion as a
function of peak envelope load power;
typical values.
4
Fig.5
Fifth order intermodulation distortion as a
function of peak envelope load power;
typical values.
2001 Mar 22
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF1047
0
d
7
(dBc)
-20
25
EVM
(%)
20
peak
15
-40
I
DQ
=450mA
I
DQ
=560mA
I
DQ
=500mA
10
rms
-60
5
-80
0
20
40
60
80
100
P
L
(PEP) (W)
0
0
10
20
30
40
P
L
(W)
V
DS
= 26 V; I
DQ
= 470 mA; T
h
≤
25
°
C; f = 960 MHz;
tuned for high linearity; see tuning procedure.
50
V
DS
= 26 V; T
h
≤
25
°
C; f
1
= 960 MHz; f
2
= 960.1 MHz
tuned for high linearity; see tuning procedure.
Fig.6
Seventh order intermodulation distortion as
a function of peak envelope load power;
typical values.
Fig.7
Error vector magnitude (EVM) / EDGE 8PSK
as a function of load power; typical values.
20
G
P
(dB)
16
50
η
D
(%)
G
P
0
ACPR
(dBc)
-20
40
η
D
12
30
200kHz
-40
250kHz
8
EVM
(%)
4
20
EVM
400kHz
-60
10
0
0
10
20
30
40
50
P
L
(W)
0
-80
0
10
20
30
40
P
L
(W)
50
V
DS
= 26 V; I
DQ
= 470 mA; T
h
≤
25
°
C; f = 960 MHz
tuned for high linearity; see tuning procedure.
V
DS
= 26 V; I
DQ
= 300 mA; T
h
≤
25
°
C; f = 960 MHz;
tuned for high linearity; see tuning procedure.
Measured EDGE channel bandwidth 270 kHz and adjacent
channels bandwidth 30 kHz.
Fig.8
EDGE 8PSK EVM, gain and efficiency as
function of load power; typical values.
Fig.9
EDGE 8PSK adjacent channel power as
function of load power; typical values.
2001 Mar 22
5
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