BF723 datasheet, PDF - EEWORLD Datasheet

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BF723: DescriptionPower Bipolar Transistor, 0.05A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin; CategoryDiscrete semiconductor The transistor; File Size35KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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Power Bipolar Transistor, 0.05A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin

BF723 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Shell connection	COLLECTOR
Maximum collector current (IC)	0.05 A
Collector-emitter maximum voltage	250 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JESD-30 code	R-PDSO-G4
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Maximum power consumption environment	2 W
Maximum power dissipation(Abs)	1.5 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Base Number Matches	1

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SOT223 PNP SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 4 – MARCH 2001

✪

FEATURES

* High breakdown and low saturation voltages

APPLICATIONS

* Suitable for video output stages in TV sets

* Switching power supplies

COMPLEMENTARY TYPE:-

BF720

PARTMARKING DETAILS:-

BF721

C

E

C

B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature

Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

VALUE

-300

-5

-100

-50

-2

-55 to +150

UNIT

V

mA

W

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Base BF721

Breakdown

Voltage

Collector-Emitter BF721

Breakdown

Voltage

Emitter-Base

Breakdown Voltage

SYMBOL

V

(BR)CBO

MIN.

-300

TYP.

MAX.

UNIT

V

CONDITIONS.

I

C

=-10

µ

A, I

E

=0

V

(BR)CEO

-300

V

I

C

=-1mA, I

B

=0*

V

(BR)EBO

-5

-10

-50

-10

-0.6

-0.9

-50

100

0.8

V

nA

µ

A

I

E

=-100

µ

A, I

C

=0

V

CB

=-200V, I

E

=0

†

Collector Cut-Off Current I

CBO

Collector Cut-Off

Current

I

CER

V

CE

=-200V, R

BE

=2.7K

Ω

V

CE

=-200V, R

BE

=2.7K

Ω

†

V

EB

=-5V, I

C

=0

I

C

=-30mA, I

B

=-5mA*

I

C

=-20mA, I

B

=-2mA*

I

C

=-25mA, V

CE

=-20V*

Emitter Cut-Off Current I

EBO

Collector-Emitter

Saturation Voltage

Base Emitter

Saturation Voltage

Static Forward Current

Transfer Ratio

Transition Frequency

Output Capacitance

V

CE(sat)

V

BE(sat)

h

FE

f

T

C

obo

µ

A

V

MHz

pF

I

C

=-10mA, V

CE

=-10V

f=100MHz

V

CB

=-30V, f=1MHz

†T

amb

=150°C

*Measured under pulsed conditions.

For typical characteristics graphs see FMMTA92 datasheet.

TBA

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Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

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