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BLF6G24-12

Description
TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power
CategoryDiscrete semiconductor    The transistor   
File Size86KB,8 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

BLF6G24-12 Overview

TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power

BLF6G24-12 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
package instructionROHS COMPLIANT, CERAMIC PACKAGE-2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage65 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandS BAND
JESD-30 codeR-CDFP-F2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature225 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLATPACK
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
BLF6G24-12
Power LDMOS transistor
Rev. 1 — 24 February 2011
Objective data sheet
1. Product profile
1.1 General description
12 W LDMOS power transistor for various applications such as ISM and industrial heating
at frequencies from 2400 MHz to 2500 MHz.
Table 1.
Typical performance
RF performance at T
case
= 25
°
C in a common source class-AB production test circuit.
Mode of operation
CW
f
(MHz)
2450
V
DS
(V)
28
P
L(AV)
(W)
12
G
p
(dB)
19
η
D
(%)
63
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Typical CW performance at a frequency of 2450 MHz, a supply voltage of 28 V and an
I
Dq
of 10 mA:
Average output power = 12 W
Power gain = 19 dB (typ)
Efficiency = 63 % (typ)
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2400 MHz to 2500 MHz)
Internally matched for ease of use
Qualified for a supply voltage of up to 32 V
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequency
range such as ISM and industrial heating.
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