BLP8G10S-270PW
Power LDMOS transistor
Rev. 2 — 1 October 2015
Product data sheet
1. Product profile
1.1 General description
270 W LDMOS packaged symmetric Doherty power transistor for base station
applications at frequencies from 700 MHz to 900 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a Doherty application test circuit. V
DS
= 28 V;
I
Dq
= 500 mA (main); V
GS(amp)peak
= 0.5 V, unless otherwise specified.
Test signal
1-carrier W-CDMA
[1]
f
(MHz)
716 to 768
V
DS
(V)
28
P
L(AV)
(dBm)
47.5
G
p
(dB)
17.3
D
(%)
46
ACPR
(dBc)
35
[1]
Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.65 dB at 0.01% probability on
CCDF per carrier.
1.2 Features and benefits
Excellent ruggedness
High-efficiency
Low thermal resistance providing excellent thermal stability
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Bias through video leads
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the 700 MHz to
900 MHz frequency range
BLP8G10S-270PW
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1, 2
3, 6
4, 5
7
Pinning
Description
gate
bias/video decoupling
drain
source
[1]
Simplified outline
6
5
4
3
Graphic symbol
4
3
2
7
1
1
2
6
5
aaa-008888
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
Description
Version
Type number
BLP8G10S-270PW HSOP6F plastic, heatsink small outline package; 6 leads (flat) SOT1221-2
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS(amp)main
V
GS(amp)peak
T
stg
T
j
[1]
Parameter
drain-source voltage
main amplifier gate-source voltage
peak amplifier gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
0.5
65
[1]
Max
65
+13
+13
+150
225
Unit
V
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
5. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
Thermal characteristics
Parameter
thermal resistance from
junction to case
Conditions
V
DS
= 28 V; I
Dq
= 650 mA (main);
V
GS(amp)peak
= 0.5 V; T
case
= 80
C;
P
L
= 56 W
P
L
= 89 W
0.50
0.43
K/W
K/W
Typ
Unit
BLP8G10S-270PW
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 2 — 1 October 2015
2 of 15
BLP8G10S-270PW
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
Per section; T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 10 V; I
D
= 225 mA
V
DS
= 28 V; I
D
= 1000 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 11.25 mA
Min
65
1.5
1.7
-
-
-
-
-
Typ
-
1.9
2.1
-
Max Unit
-
2.3
2.5
1.4
V
V
V
A
A
nA
S
m
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 2.25 mA
37.5 -
-
14
90
140
-
148
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 7875 mA
Table 7.
RF characteristics
Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.65 dB at 0.01 % probability
on the CCDF per carrier; f
1
= 718.5 MHz; f
2
= 765.5 MHz; RF performance at V
DS
= 28 V;
I
Dq
= 2000 mA (main); T
case
= 25
C; unless otherwise specified; in a class AB production test circuit
at frequencies from 716 MHz to 768 MHz.
Symbol
G
p
RL
in
D
ACPR
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio
Conditions
P
L(AV)
= 56 W
P
L(AV)
= 56 W
P
L(AV)
= 56 W
P
L(AV)
= 56 W
Min
19
-
25
-
Typ
20
16
29
38
Max
-
12
-
33
Unit
dB
dB
%
dBc
Table 8.
RF characteristics
Test signal: pulsed RF; f
1
= 718.5 MHz; f
2
= 756.5 MHz; t
p
= 10 ms;
= 10 %; RF performance at
V
DS
= 28 V; I
Dq
= 2000 mA (main); T
case
= 25
C; unless otherwise specified; in a class-AB narrow
band production circuit.
Symbol
P
L(3dB)
Parameter
output power at 3 dB gain compression
Conditions
Min
315
Typ
365
Max
-
Unit
W
BLP8G10S-270PW
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 2 — 1 October 2015
3 of 15
BLP8G10S-270PW
Power LDMOS transistor
7. Application information
7.1 Application circuit
40 mm
40 mm
L3
C26
C5
R3
C18
R2
C3
Q1
C14
C1
R1
X1
C9
C25
C7
C17
C16
C15
C11
L1
75 mm
C2
C8
C10
C12
C4
Q2
C19
C21
C22
C23
C13
C6
R4
L2
R5
C24
L4
aaa-019800
Printed-Circuit Board (PCB): Rogers RO3006:
r
= 6.15; thickness = 0.635 mm; thickness copper
plating = 70
m.
See
Table 11
for a list of components.
Fig 1.
Component layout
Table 9.
List of components
See
Figure 15
for component layout.
Component
C1, C2, C3, C4, C14, C19, C25
C5, C6, C16, C17, C22, C23, C26
C7, C8, C9, C10
C11, C12
C13
C15, C21
C18, C24
L1, L2, L3, L4
Q1, Q2
R1
R2, R4
BLP8G10S-270PW
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
chip ferrite bead
transistor
resistor
resistor
Value
82 pF
10
F
15 pF
5.6 pF
1.8 pF
1
F
2200
F
-
-
50
1.1 k
Remarks
ATC 600F
Murata: GRM32ER71H106KA12
ATC 600F
ATC 600F
ATC 600F
Murata: GRM31CR72A105KA01L
Multicomp: MCGPR35V228M16X32
Murata; BLE32PN300SN1L
Fairchild: MMBT2222
Panasonic: ERJ-L14KF50MU
Vishay Dale
© Ampleon Netherlands B.V. 2016. All rights reserved.
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 2 — 1 October 2015
4 of 15
BLP8G10S-270PW
Power LDMOS transistor
Table 9.
List of components
See
Figure 15
for component layout.
Component
R3
R5
X1
Description
resistor
resistor
hybrid coupler
Value
1.2 k
3.9 k
3 dB, 90
Remarks
Vishay Dale
Vishay Dale
Anaren: X3C07P1-03S
7.2 Graphical data measured at frequency band from 716 MHz to 768 MHz
7.2.1 Pulsed CW
aaa-019723
aaa-019724
70
η
D
(%)
60
(3)
(2)
(1)
19
G
p
(dB)
18
50
17
(3)
(2)
(1)
40
16
30
15
20
14
10
0
50
100
150
200
250
300 350
P
L
(W)
400
13
0
50
100
150
200
250
300
P
L
(W)
350
V
DS
= 28 V; I
Dq
= 500 mA; V
GS(amp)peak
= 0.50 V;
t
p
= 100
s;
= 10 %.
(1) f = 716 MHz
(2) f = 742 MHz
(3) f = 768 MHz
V
DS
= 28 V; I
Dq
= 500 mA; V
GS(amp)peak
= 0.50 V;
t
p
= 100
s;
= 10 %.
(1) f = 716 MHz
(2) f = 742 MHz
(3) f = 768 MHz
Fig 2.
Drain efficiency as a function of output power;
typical values
Fig 3.
Power gain as a function of output power;
typical values
BLP8G10S-270PW
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 2 — 1 October 2015
5 of 15
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