Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM150GAL120DLC
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I
2
t - value, Diode
Isolations-Prüfspannung
insulation test voltage
t
P
= 1 ms
T
C
= 80 °C
T
C
= 25 °C
t
P
= 1 ms, T
C
= 80°C
V
CES
I
C,nom.
I
C
I
CRM
1200
150
300
300
V
A
A
A
T
C
=25°C, Transistor
P
tot
1,2
kW
V
GES
+/- 20V
V
I
F
150
A
I
FRM
300
A
V
R
= 0V, t
p
= 10ms, T
Vj
= 125°C
I
2
t
4,8
kA
2
s
RMS, f = 50 Hz, t = 1 min.
V
ISOL
2,5
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Gateladung
gate charge
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
I
C
= 150A, V
GE
= 15V, T
vj
= 25°C
I
C
= 150A, V
GE
= 15V, T
vj
= 125°C
I
C
= 6mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE(th)
V
CE sat
min.
-
-
4,5
typ.
2,1
2,4
5,5
max.
2,6
2,9
6,5
V
V
V
V
GE
= -15V...+15V
Q
G
-
1,6
-
µC
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V
C
ies
-
11
-
nF
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V
V
CE
= 1200V, V
GE
= 0V, T
vj
= 25°C
V
CE
= 1200V, V
GE
= 0V, T
vj
= 125°C
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
C
res
I
CES
-
-
-
0,7
7
700
-
-
184
-
400
nF
µA
µA
nA
I
GES
-
prepared by: Mark Münzer
approved by: M.Hierholzer
date of publication: 07.02.2000
revision: 2
1(8)
Seriendatenblatt_BSM150GAL120DLC.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM150GAL120DLC
min.
I
C
= 150A, V
CE
= 600V
V
GE
= ±15V, R
G
= 5,6Ω, T
vj
= 25°C
V
GE
= ±15V, R
G
= 5,6Ω, T
vj
= 125°C
t
d,on
-
-
0,05
0,06
-
-
µs
µs
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
typ.
max.
Anstiegszeit (induktive Last)
rise time (inductive load)
I
C
= 150A, V
CE
= 600V
V
GE
= ±15V, R
G
= 5,6Ω, T
vj
= 25°C
V
GE
= ±15V, R
G
= 5,6Ω, T
vj
= 125°C
t
r
-
-
0,05
0,07
-
-
µs
µs
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
I
C
= 150A, V
CE
= 600V
V
GE
= ±15V, R
G
= 5,6Ω, T
vj
= 25°C
V
GE
= ±15V, R
G
= 5,6Ω, T
vj
= 125°C
t
d,off
-
-
0,57
0,57
-
-
µs
µs
Fallzeit (induktive Last)
fall time (inductive load)
I
C
= 150A, V
CE
= 600V
V
GE
= ±15V, R
G
= 5,6Ω, T
vj
= 25°C
V
GE
= ±15V, R
G
= 5,6Ω, T
vj
= 125°C
t
f
-
-
0,04
0,05
-
-
µs
µs
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
Modulinduktivität
stray inductance module
Modul Leitungswiderstand, Anschlüsse – Chip
module lead resistance, terminals – chip
I
C
= 150A, V
CE
= 600V, V
GE
= 15V
R
G
= 5,6Ω, T
vj
= 125°C, L
S
= 60nH
I
C
= 150A, V
CE
= 600V, V
GE
= 15V
R
G
= 5,6Ω, T
vj
= 125°C, L
S
= 60nH
t
P
≤
10µsec, V
GE
≤
15V, R
G
= 5,6Ω
T
Vj
≤125°C,
V
CC
=900V, V
CEmax
=V
CES
-L
sCE
·dI/dt
I
SC
L
sCE
-
-
950
25
-
-
A
nH
E
off
-
18
-
mWs
E
on
-
17
-
mWs
T
C
=25°C
R
CC‘+EE‘
-
0,6
-
mΩ
Charakteristische Werte / Characteristic values
Inversdiode / Free-Wheel Diode
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
I
F
= 150A, V
GE
= 0V, T
vj
= 25°C
I
F
= 150A, V
GE
= 0V, T
vj
= 125°C
I
F
= 150A, - di
F
/dt = 3100A/µsec
V
R
= 600V, VGE = -15V, T
vj
= 25°C
V
R
= 600V, VGE = -15V, T
vj
= 125°C
Sperrverzögerungsladung
recovered charge
I
F
= 150A, - di
F
/dt = 3100A/µsec
V
R
= 600V, VGE = -15V, T
vj
= 25°C
V
R
= 600V, VGE = -15V, T
vj
= 125°C
Abschaltenergie pro Puls
reverse recovery energy
I
F
= 150A, - di
F
/dt = 3100A/µsec
V
R
= 600V, VGE = -15V, T
vj
= 25°C
V
R
= 600V, VGE = -15V, T
vj
= 125°C
E
rec
-
-
4
10
-
-
mWs
mWs
Q
r
-
-
17
32
-
-
µAs
µAs
I
RM
-
-
180
220
-
-
A
A
V
F
min.
-
-
typ.
1,8
1,7
max.
2,3
2,2
V
V
Chopperdiode / Chopper Diode
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
I
F
= 200A, V
GE
= 0V, T
vj
= 25°C
I
F
= 200A, V
GE
= 0V, T
vj
= 125°C
I
F
= 200A, - di
F
/dt = 4000A/µsec
V
R
= 600V, VGE = -15V, T
vj
= 25°C
V
R
= 600V, VGE = -15V, T
vj
= 125°C
Sperrverzögerungsladung
recovered charge
I
F
= 200A, - di
F
/dt = 4000A/µsec
V
R
= 600V, VGE = -15V, T
vj
= 25°C
V
R
= 600V, VGE = -15V, T
vj
= 125°C
Abschaltenergie pro Puls
reverse recovery energy
I
F
= 200A, - di
F
/dt = 4000A/µsec
V
R
= 600V, VGE = -15V, T
vj
= 25°C
V
R
= 600V, VGE = -15V, T
vj
= 125°C
E
rec
Q
r
I
RM
V
F
min.
-
-
typ.
1,8
1,7
max.
2,3
2,2
V
V
-
-
240
300
-
-
A
A
-
-
23
42
-
-
µAs
µAs
-
-
6
14
-
-
mWs
mWs
2(8)
Seriendatenblatt_BSM150GAL120DLC.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM150GAL120DLC
Thermische Eigenschaften / Thermal properties
min.
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operation temperature
Lagertemperatur
storage temperature
Transistor / transistor, DC
Diode/Diode, DC
pro Modul / per module
λ
Παστε
= 1 W/m * K /
λ
grease
= 1 W/m * K
R
thCK
R
thJC
-
-
-
typ.
-
-
0,01
max.
0,1
0,25
-
K/W
K/W
K/W
T
vj
-
-
150
°C
T
op
-40
-
125
°C
T
stg
-40
-
150
°C
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see appendix
Innere Isolation
internal insulation
Kriechstrecke
creepage distance
Luftstrecke
clearance
CTI
comperative tracking index
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Anzugsdrehmoment f. elektr. Anschlüsse
terminal connection torque
Gewicht
weight
terminals M6
M1
3
AL
2
O
3
20
mm
11
mm
275
6
Nm
M2
2,5
5
Nm
G
420
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
3(8)
Seriendatenblatt_BSM150GAL120DLC.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM150GAL120DLC
Ausgangskennlinie (typisch)
Output characteristic (typical)
I
C
= f (V
CE
)
V
GE
= 15V
300
250
Tj = 25°C
Tj = 125°C
200
I
C
[A]
150
100
50
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
V
CE
[V]
Ausgangskennlinienfeld (typisch)
Output characteristic (typical)
300
I
C
= f (V
CE
)
T
vj
= 125°C
250
VGE = 17V
VGE = 15V
VGE = 13V
200
VGE = 11V
VGE = 9V
VGE = 7V
I
C
[A]
150
100
50
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
V
CE
[V]
4(8)
Seriendatenblatt_BSM150GAL120DLC.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM150GAL120DLC
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
I
C
= f (V
GE
)
V
CE
= 20V
300
250
Tj = 25°C
Tj = 125°C
200
I
C
[A]
150
100
50
0
5
6
7
8
9
10
11
12
V
GE
[V]
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
300
I
F
= f (V
F
)
250
Tj = 25°C
Tj = 125°C
200
I
F
[A]
150
100
50
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
V
F
[V]
5(8)
Seriendatenblatt_BSM150GAL120DLC.xls
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