Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin,
| Parameter Name | Attribute value |
| Maker | Zetex Semiconductors |
| package instruction | SMALL OUTLINE, R-PDSO-G4 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Is Samacsys | N |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 1 A |
| Collector-emitter maximum voltage | 80 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 63 |
| JESD-30 code | R-PDSO-G4 |
| Number of components | 1 |
| Number of terminals | 4 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | NPN |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 125 MHz |
| VCEsat-Max | 0.5 V |
| Base Number Matches | 1 |
| BCP56-10TA | BCP56-10TC | UBCP56-10 | BCP56TC | BCP56-16TA | BCP56-16TC | |
|---|---|---|---|---|---|---|
| Description | Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, | Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, | Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, LEAD FREE PACKAGE-4 | Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin | Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, | Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, |
| package instruction | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | LEAD FREE PACKAGE-4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 |
| Reach Compliance Code | unknown | unknown | not_compliant | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Shell connection | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
| Maximum collector current (IC) | 1 A | 1 A | 1 A | 1 A | 1 A | 1 A |
| Collector-emitter maximum voltage | 80 V | 80 V | 80 V | 80 V | 80 V | 80 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 63 | 63 | 63 | 25 | 100 | 100 |
| JESD-30 code | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 4 | 4 | 4 | 4 | 4 | 4 |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/channel type | NPN | NPN | NPN | NPN | NPN | NPN |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | YES | YES | YES |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 125 MHz | 125 MHz | 125 MHz | 125 MHz | 125 MHz | 125 MHz |
| Maker | Zetex Semiconductors | Zetex Semiconductors | Zetex Semiconductors | - | Zetex Semiconductors | Zetex Semiconductors |
| Maximum operating temperature | 150 °C | 150 °C | - | 150 °C | 150 °C | 150 °C |
| VCEsat-Max | 0.5 V | 0.5 V | - | 0.5 V | 0.5 V | 0.5 V |
| Base Number Matches | 1 | 1 | 1 | 1 | - | - |
京公网安备 11010802033920号
EEWORLD
