BSH104 datasheet, PDF - EEWORLD Datasheet

BSH104: DescriptionTRANSISTOR 1100 mA, 12 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size91KB，3 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BSH104 Overview

TRANSISTOR 1100 mA, 12 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal

Parameter Name	Attribute value
Maker	NXP
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW THRESHOLD, LOGIC LEVEL COMPATIBLE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	12 V
Maximum drain current (ID)	1.1 A
Maximum drain-source on-resistance	0.3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.5 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

	BSH104	BSH104T/R
Description	TRANSISTOR 1100 mA, 12 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal	TRANSISTOR 1100 mA, 12 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal
Maker	NXP	NXP
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Other features	LOW THRESHOLD, LOGIC LEVEL COMPATIBLE	LOW THRESHOLD, LOGIC LEVEL COMPATIBLE
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	12 V	12 V
Maximum drain current (ID)	1.1 A	1.1 A
Maximum drain-source on-resistance	0.3 Ω	0.3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G3	R-PDSO-G3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.5 W	0.5 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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