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BSH107

Description
TRANSISTOR 1750 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SC-74, 6 PIN, FET General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size153KB,7 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BSH107 Overview

TRANSISTOR 1750 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SC-74, 6 PIN, FET General Purpose Small Signal

BSH107 Parametric

Parameter NameAttribute value
MakerNXP
Parts packaging codeSC-74
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)1.75 A
Maximum drain-source on-resistance0.09 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G6
Number of components1
Number of terminals6
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power consumption environment0.7 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
FEATURES
• Very low threshold voltage
• Fast switching
• Logic level compatible
• Subminiature surface mount
package
BSH107
SYMBOL
d
QUICK REFERENCE DATA
V
DS
= 20 V
I
D
= 1.75 A
g
R
DS(ON)
90 mΩ (V
GS
= 2.5 V)
V
GS(TO)
0.4 V
s
GENERAL DESCRIPTION
N-channel, enhancement mode,
logic level, field-effect power
transistor. This device has very low
threshold voltage and extremely
fast switching making it ideal for
battery powered applications and
high speed digital interfacing.
The BSH107 is supplied in the
SOT457 subminiature surface
mounting package.
PINNING
PIN
1,2,5,6 drain
3
4
gate
source
DESCRIPTION
SOT457
6
5
4
Top view
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
, T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
CONDITIONS
R
GS
= 20 kΩ
T
a
= 25 ˚C
T
a
= 100 ˚C
T
a
= 25 ˚C
T
a
= 25 ˚C
T
a
= 100 ˚C
MIN.
-
-
-
-
-
-
-
-
- 55
MAX.
20
20
±
8
1.75
1.1
7
0.417
0.17
150
UNIT
V
V
V
A
A
A
W
W
˚C
THERMAL RESISTANCES
SYMBOL
R
th j-a
PARAMETER
Thermal resistance junction to
ambient
CONDITIONS
FR4 board, minimum
footprint
TYP.
300
MAX.
-
UNIT
K/W
August 1998
1
Rev 1.000
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