Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
FEATURES
•
Direct interface to C-MOS, TTL,
etc.
•
High-speed switching
•
No secondary breakdown.
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in a
SOT223 package and intended for
use as a line current interruptor in
telephone sets and for applications in
relay, high-speed and line
transformer drivers.
PINNING - SOT223
PIN
1
2
3
4
gate
drain
source
drain
Fig.1 Simplified outline (SOT223) and symbol.
DESCRIPTION
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
R
DSon
V
GSth
PARAMETER
drain-source voltage (DC)
drain current (DC)
drain-source on-state resistance
gate-source threshold voltage
BSP122
MAX.
200
550
2.5
2
V
UNIT
mA
Ω
V
handbook, halfpage
4
d
g
1
Top view
2
3
MAM054
s
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
V
DS
V
GSO
I
D
I
DM
P
tot
T
stg
T
j
Note
1. Transistor mounted on an epoxy printed circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum
6 cm
2
.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an epoxy printed circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum
6 cm
2
.
2001 May 18
2
PARAMETER
thermal resistance from junction to ambient; note 1
VALUE
83.3
UNIT
K/W
PARAMETER
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
T
amb
≤
25
°C;
note 1
open drain
CONDITIONS
−
−
−
−
−
−55
−
MIN.
MAX.
200
±20
550
3
1.5
+150
150
V
V
mA
A
W
°C
°C
UNIT
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)DSS
I
DSS
I
GSS
V
GSth
R
DSon
Y
fs
C
iss
C
oss
C
rss
t
on
t
off
PARAMETER
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
drain-source on-resistance
transfer admittance
input capacitance
output capacitance
reverse transfer capacitance
CONDITIONS
I
D
= 10
µA;
V
GS
= 0
V
DS
= 160 V; V
GS
= 0
V
GS
=
±20
V; V
DS
= 0
I
D
= 1 mA; V
GS
= V
DS
I
D
= 750 mA; V
GS
= 10 V
I
D
= 20 mA; V
GS
= 2.4 V
I
D
= 750 mA; V
DS
= 25 V
V
DS
= 25 V; V
GS
= 0; f = 1 MHz
V
DS
= 25 V; V
GS
= 0; f = 1 MHz
V
DS
= 25 V; V
GS
= 0; f = 1 MHz
I
D
= 750 mA; V
DD
= 50 V;
V
GS
= 0 to 10 V
I
D
= 750 mA; V
DD
= 50 V;
V
GS
= 0 to 10 V
MIN.
200
−
−
0.4
−
−
400
−
−
−
−
−
BSP122
TYP. MAX. UNIT
−
−
−
−
1.7
3
900
100
20
10
−
1
100
2
2.5
−
−
−
−
−
20
60
V
µA
nA
V
Ω
Ω
mS
pF
pF
pF
Switching times (see Figs
2
and
3)
turn-on time
turn-off time
10
45
ns
ns
handbook, halfpage
handbook, halfpage
90 %
VDD = 50 V
INPUT
10 %
90 %
10 V
0V
ID
50
Ω
MBB691
OUTPUT
10 %
ton
toff
MBB692
V
DD
= 50 V.
Fig.2 Switching times test circuit.
Fig.3 Input and output waveforms.
2001 May 18
3
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
DATA SHEET STATUS
DATA SHEET STATUS
(1)
Objective data
PRODUCT
STATUS
(2)
Development
DEFINITIONS
BSP122
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2001 May 18
5
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