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BT137S-800

Description
TRIAC, 800 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-252, PLASTIC PACKAGE-3
CategoryAnalog mixed-signal IC    Trigger device   
File Size43KB,6 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BT137S-800 Overview

TRIAC, 800 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-252, PLASTIC PACKAGE-3

BT137S-800 Parametric

Parameter NameAttribute value
MakerNXP
Parts packaging codeTO-252
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codeunknown
Shell connectionMAIN TERMINAL 2
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage100 V/us
Maximum DC gate trigger current35 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current20 mA
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
Maximum leakage current0.5 mA
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum rms on-state current8 A
Maximum repetitive peak off-state leakage current500 µA
Off-state repetitive peak voltage800 V
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Trigger device type4 QUADRANT LOGIC LEVEL TRIAC
Philips Semiconductors
Product specification
Triacs
BT137S series
GENERAL DESCRIPTION
Passivated triacs in a plastic envelope,
suitable for surface mounting, intended
for use in applications requiring high
bidirectional transient and blocking
voltage capability and high thermal
cycling
performance.
Typical
applications include motor control,
industrial and domestic lighting, heating
and static switching.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
BT137S-
BT137S-
BT137S-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX.
600
600F
600G
600
8
65
MAX.
800
800F
800G
800
8
65
UNIT
V
DRM
I
T(RMS)
I
TSM
V
A
A
PINNING - SOT428
PIN
1
2
3
tab
DESCRIPTION
MT1
MT2
gate
MT2
PIN CONFIGURATION
tab
SYMBOL
T2
T1
2
1
3
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
full sine wave; T
mb
102 ˚C
full sine wave; T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 12 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
T2+ G+
T2+ G-
T2- G-
T2- G+
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
-600
600
1
8
65
71
21
50
50
50
10
2
5
5
0.5
150
125
MAX.
-800
800
UNIT
V
A
A
A
A
2
s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
June 2001
1
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