BT169H-L
SCR
3 July 2014
Product data sheet
1. General description
Planar passivated very sensitive gate Silicon Controlled Rectifier in a SOT54 (TO-92)
plastic package.
2. Features and benefits
•
•
•
High voltage capability
Planar passivated for voltage ruggedness and reliability
Very sensitive gate
3. Applications
•
•
•
•
•
Earth leakage circuit breakers or Ground Fault Circuit Interrupters (GFCI)
Ignition circuits
Low power latching circuits
Protection circuits / shut-down circuits: lighting ballasts
Protection circuits / shut-down circuits: Switched Mode Power Supplies
4. Quick reference data
Table 1.
Symbol
V
DRM
V
RRM
I
TSM
Quick reference data
Parameter
repetitive peak off-
state voltage
repetitive peak reverse
voltage
non-repetitive peak on- half sine wave; T
j(init)
= 25 °C;
state current
t
p
= 8.3 ms
half sine wave; T
j(init)
= 25 °C;
t
p
= 10 ms;
Fig. 4; Fig. 5
I
T(AV)
I
T(RMS)
average on-state
current
RMS on-state current
half sine wave; T
lead
≤ 83 °C;
Fig. 1
half sine wave; T
lead
≤ 83 °C;
Fig. 2;
Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 10 mA; T
j
= 25 °C;
Fig. 7
15
33
50
µA
-
-
-
-
0.5
0.8
A
A
Conditions
Min
-
-
-
-
Typ
-
-
-
-
Max
800
800
10
9
Unit
V
V
A
A
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TO
-92
NXP Semiconductors
BT169H-L
SCR
5. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
A
G
K
anode
gate
cathode
321
Simplified outline
Graphic symbol
A
G
sym037
K
TO-92 (SOT54)
6. Ordering information
Table 3.
Ordering information
Package
Name
BT169H-L
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
Type number
7. Marking
Table 4.
BT169H-L
Marking codes
Marking code
BT169HL
Type number
BT169H-L
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© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
3 July 2014
2 / 13
NXP Semiconductors
BT169H-L
SCR
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
repetitive peak reverse voltage
average on-state current
RMS on-state current
non-repetitive peak on-state
current
half sine wave; T
lead
≤ 83 °C;
Fig. 1
half sine wave; T
lead
≤ 83 °C;
Fig. 2;
Fig. 3
half sine wave; T
j(init)
= 25 °C;
t
p
= 8.3 ms
half sine wave; T
j(init)
= 25 °C;
t
p
= 10 ms;
Fig. 4; Fig. 5
I t
dI
T
/dt
I
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
0.8
P
tot
(W)
0.6
2.8
0.4
4
conduction
angle
(degrees)
30
60
90
120
180
0
0.1
0.2
0.3
0.4
form
factor
a
4
2.8
2.2
1.9
1.57
0.5
α
101
2.2
a = 1.57
1.9
2
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-
Max
800
800
0.5
0.8
10
9
0.41
50
1
5
2
0.1
150
125
001aab446
Unit
V
V
A
A
A
A
2
I t for fusing
rate of rise of on-state current
peak gate current
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
2
t
p
= 10 ms; SIN
I
T
= 2 A; I
G
= 10 mA; dI
G
/dt = 100 mA/
µs
A s
A/µs
A
V
W
W
°C
°C
77
T
lead(max)
(°C)
89
over any 20 ms period
-
-40
-
0.2
113
0
I
T(AV)
(A)
125
0.6
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 1.
BT169H-L
Total power dissipation as a function of average on-state current; maximum values
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© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
3 July 2014
3 / 13
NXP Semiconductors
BT169H-L
SCR
2
I
T(RMS)
(A)
1.5
001aab449
1
I
T(RMS)
(A)
0.8
83 °C
001aab450
0.6
1
0.4
0.5
0.2
0
10
-2
10
-1
1
10
surge duration (s)
0
-50
0
50
100
150
T
lead
(°C)
f = 50 Hz; T
lead
= 83 °C
Fig. 2.
RMS on-state current as a function of surge
duration for sinusoidal currents
10
I
TSM
(A)
8
Fig. 3.
RMS on-state current as a function of lead
temperature; maximum values
003aac212
6
4
I
T
I
TSM
2
t
t
p
T
j(init)
= 25 °C max
0
1
10
10
2
number of cycles
10
3
f = 50 Hz
Fig. 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT169H-L
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© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
3 July 2014
4 / 13
NXP Semiconductors
BT169H-L
SCR
10
3
I
TSM
(A)
I
T
003aac211
I
TSM
10
2
t
t
p
T
j(init)
= 25 °C max
10
1
10
-5
10
-4
10
-3
t
p
(s)
10
-2
t
p
≤ 10 ms
Fig. 5.
Non-repetitive peak on-state current as a function of pulse width; maximum values
BT169H-L
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
3 July 2014
5 / 13
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