BU4508DZ datasheet, PDF - EEWORLD Datasheet

BU4508DZ: Description8A, 800V, NPN, Si, POWER TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size189KB，6 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

Download Datasheet Parametric Compare View All

BU4508DZ Overview

8A, 800V, NPN, Si, POWER TRANSISTOR

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NXP
Reach Compliance Code	unknown
Other features	BUILT-IN BIAS RESISTOR
Shell connection	ISOLATED
Maximum collector current (IC)	8 A
Collector-emitter maximum voltage	800 V
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	4.2
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	32 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

	BU4508DZ	934055090127
Description	8A, 800V, NPN, Si, POWER TRANSISTOR	TRANSISTOR 8 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB, PLASTC PACKAGE-3, BIP General Purpose Power
Is it Rohs certified?	conform to	conform to
Maker	NXP	NXP
Reach Compliance Code	unknown	unknown
Other features	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR
Shell connection	ISOLATED	ISOLATED
Maximum collector current (IC)	8 A	8 A
Collector-emitter maximum voltage	800 V	800 V
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	4.2	4.2
JESD-30 code	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e3	e3
Number of components	1	1
Number of terminals	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Matte Tin (Sn)	TIN
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

Shortcut: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

Popular Components