MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
Product Preview
HDTMOSTM E=FETTM
High Energy Power FET
P=Channel EnhancementmModeSilicon Gate
This advanced high-cell density HDTMOS E-FET is designed to
withstand high energy in the avalanche and commutation modes.
This new energy efficient design also offers a drain-to-source
diode with a fast recovery time. Designed for Iow-vohage,
high-speed switching applications in power supplies, PWM motor
controls, and other inductive loads. The avalanche
energy
capability is specified to eliminate the guesswork in designs
where inductive, loads are switched and offer addkional safety
margin against unexpected voltage transients.
~ Ultra Low RDS(on), High-Cell Density, HDTMOS
.
SPICE Parameters Available
. Diode is Characterized for Use in Bridge Grcuits
0
Diode Exhibits High Speed, Yet Soft Recovey
q
lDss
and VDS(on) Specified at Elevated Temperature
q
Avalanche
Energy Specified
DEVICE MARKING:
D2P03
MMDF2P03HD
Wwern Oeviss
*H
v
WD
TMO;
no
P4hanneI
-
.,J
~
,,~f
‘$’&
CASE 751
SG8
Sour-1
Gat&l
ORDERING
INFORMATION
Sourc&2
Gate-2
D
1
8
7
2
3
8
4
5
TopMW
I
2.0
1.6
6.0
1.5
Drain-l
Drain-1
Drsin-2
Drsin-2
I
Drain-t&Gate Voltage (RG~= ~~, ~)
Gat&to-%urce Voltage ~l~o~nuous
Drain Current — C~wouSd
TA = 25°C
@
—
@’~,@bs
,+&~*18Pulse
Total Power ~~$~tion
OperaK
~~~~~~1~
‘~{KF
$-al
YA=
1
Oooc
I
1;
IDM
In
I
Adc
t
(~s 10 Ks)
Apk
Watts
‘c
@ TA = 25”C(1 )
PD
EAS
~~,$~orage Temperature Range
Drain-to-Source Avalanche Energy — Skting TJ = 25°C
25 V*, VGS = 4.5 V*) IL= ~ Apk, L = 0.30 mH, flG =
25 Q)
Resistance — Junction to Ambient(l )
Pumoses.
1/8” from ~se
pad size.
fmr 5 seconds
–55to 150
60
RWA
62.5
260
mJ
‘cm
Oc
‘tiaximum Lead Temmrature for Solderina
=
TI
(1) When surfm mounted to an FM hard using the minimumr-remended
This dwumnt
E-FET and HDTMOSare trademsti
WOS is a registeredtradeti
of Motomk Inc.
mnteins Informatbn on a mw produti. Spesflbatlons and Informstbn herein are subj~ to ~ange whhoti no!ke.
d Motorok Inc.
Prafemed devkw are Motorola rammndd
chd&
for futura uw and k!
overall value.
MO~ROLA
0 MotoroQ Inc. 1~
@
ELECTRICAL
CHARACTERIS~CS
(Tc =
25°C unless othemise noted)
I
Symbl
I
Min
I
I
OFF CHARACTERIS~CS
Characteristic
Typ
I
Max
I
Unit
I
Drain%urca BreakdownVoltage
(VGs = OVdc,
[D = 0.25 mA)
Temperature Cwfficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, V6S = OVdc)
(VDS = 20 Vdc, VGS =
O
Vdc,
TJ = 125°C)
Gat&Bcdy Leakage Current (VGS = * 20 v&, vDs = O)
ON CHARACTERISTIC~l)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mA)
Temperature Coefficient (Negative)
Static Drain-%urce On-Resistance (VGS = 4.5 Vdc, ID = 1.0 Ads)
Drain%urce On-Voltage (VGS = 4.5 Vdc)
(ID = 2.0 Adc)
(lD = 1.0
Adc, TJ = 125”C)
Foward Transconductance (VDS = 4.5 Vdc, ID = 1,0 Adc)
DYNAMIC CHARACTERISTfCS
Input Capacitanm
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS(1)
Turn-On Delay Tme
Rise Tme
Tum~ff Delay Time
Fall Tme
Gate Charge
,<e, ~.’
,
(VDS = 24 Vdc, 1~=:~~ A*,
VGS = ~~k~c)
~
..,’i.:.:i!@
\\* -i,;.:
s \\:::~\,
SOURCE-DRAIN DIODE CHARACTERISTICS
%.$ ~~“
/f\h., .,,.
+.>.,
,:.*k+,\
.~<..
Foward On-Voltage
(lS/;$$~M,
VGS = OVdc)
(1s = 2JQ&A~’?GS = O
Vdc, TJ = 125°C)
,,.:.,ya *t\\,
~.:.c>,t..
.V ..;
Reverse Recovery Tme
y.:,:, ..*.
~
~**,
$’~’+i..~.$:.’v?”
*,’!
([S = 2.0 Adc,
.,. , $:\ $4s
,
,,$*Y ...!s,~
,.., .,+
dl~dt = 100 Nw)
~?
‘{$::,,
‘“<, +
<
Reverse Recovey Stored=,@@rge
$“
INTERNAL PACKAGE l~~WNCE
Internal Drain lndy~~m:
(Measured fr~~:~~@rain lead 0.25” from package to center of die)
Internal Som l@ctanca
(Mea~~Jr@
the source lead 0.25” from package
to source
bnd pad)
(1)
Pu18e ~:@*
Wdth < SCOps, DW Cycbs
w.
(VDS
=
V(BR)DSS
~
Vdc
—
—
mV/OC
@dc
IDS
—
—
l~s
—
—
TBD
—
2.0
—
100
@{*:*:
...,\,.
... ““’t*>t,,
.,:r.~.\ ..,?,.
“,<*
VGS(th)
1.0
RDS(on)
VDS(on)
—
—
—
1.5
Y ‘&’
“
.’:,;:;:!.:,:,.
$$;,%; ~?
.,/,. ~ ,$
.
..Y. . ,.:.,:> mV/OC
Ohm
Vdc
— ,, **2
, ;~4,p
.,..:.*,,.7,
... ,,*,
~.+j?:
~t,;+,,
‘
.,,s,~’~~
0.5
–
_
mhos
9FS
qss
(VDS = 24
Vdc, vGs = O Vdc,
f =
1.0
MHz)
Y
,%3$$,<,$ I
‘~::
.. ..,*
.
..*‘
,. ‘!~a
‘$3 ,’.h,s
~ —
“-
COS**+;*%
;?
–
Tq~;$;q ~,2“-
>,. *$.‘*>
.,*~:$\.*$:
.,,
~:,$j\
..<
::. ‘~ -’””
TBD
TBD
TBD
TBD
—
—
—
—
—
—
—
—
—
—
pF
ns
15 Vdc, ID = 2.0 Adc, $’”
,,..<-,:~d~,
‘h.. ,,3’
VGS = 10 V&,
‘>
-!$~\>
Rg =9.1 Q)
b(o~
sg,;F<t;~
tf
Qg
Qgs
Qqd
VSD
TBD
–
—
—
–
—
TBD
TBD
TBD
TBD
TBD
nC
—
—
b
h
b
QRR
LD
Ls
–
–
–
—
—
v&
0.70
TBD
0.69
TBD
TBD
TBD
TBD
TBD
—
—
—
—
—
—
—
—
yc
ns
nH
nH
–
MOTOROLA
2
MMDF2P03HD
京公网安备 11010802033920号
EEWORLD
