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BU4525AX

Description
12A, 800V, NPN, Si, POWER TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size218KB,2 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BU4525AX Overview

12A, 800V, NPN, Si, POWER TRANSISTOR

BU4525AX Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
Reach Compliance Codeunknown
Shell connectionISOLATED
Maximum collector current (IC)12 A
Collector-emitter maximum voltage800 V
ConfigurationSINGLE
Minimum DC current gain (hFE)4.2
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment45 W
Maximum power dissipation(Abs)45 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
VCEsat-Max3 V
Crop here for Mid-Atlantic paper size
DISCRETE SEMICONDUCTORS
Fact Sheet 079
High-quality glass-passivated diodes
(Implotec)
BYD33J competitor investigation
This publication offers a direct comparison between Philips
Semiconductors’ glass-passivated BYD33J diode family (based on
the company’s proprietary Implotec technology) and two major
competitor products. The comparison highlights major advantages
of the Philips technology, including high reliability and excellent
thermal performance with no tendency toward delamination at the lead-
package interfaces.
Philips’ BYD33J
Package
Glass Implotec SOD81
Comparable competitor I
Plastic DO-41
Comparable competitor II
Glass plastic DO-41
Electrical
Glass passivated
High maximum operating temperature
(T
jmax
= 175 °C)
Low leakage current (typ. I
R
= 8.0 µA,
T
a
= 150 °C)
Excellent stability (zero defects in
259k device hours)
Guaranteed avalanche energy
absorption capability (E
RSM
to
destruction = 16 mJ )
Silicon rubber passivation
Low max operating temperature
(T
jmax
= 125 °C)
Higher leakage current due to
passivation (typ. I
R
= 275 µA,
T
a
= 150 °C)
Poor stability although level of
instability is just acceptable
Lower capability to withstand reverse
energy (E
RSM
to destruction = 2 mJ)
Glass bead moulded in plastic or
passivated chip
Lower max operating temperature
(T
jmax
= 150 °C)
Comparable leakage current
(typ. I
R
= 10 µA, T
a
= 150 °C)
Stability is acceptable
Lower capability to withstand reverse
energy (E
RSM
to destruction = 10 mJ)
Mechanical
Excellent pressure contacts due to
Implotec technology
Not sensitive to moisture,
hermetically sealed — no rejects on
humidity tests
Fatigue free because coefficients of
expansion of all used parts are
matched
Excellent thermal-fatigue performance
— no rejects in fatigue tests
Low temperature soldering
construction
Sensitive to moisture, plastic is
hygroscopic, delamination after
moulding
Plastic coefficient of expansion does
not match with the other parts,
resulting in delamination
Often rejects, chip cracks due to
coefficients of expansion
Low temperature soldering
construction
Glass-plastic is still sensitive to
moisture
With glass-plastic, delaminations are
still seen
Better than just plastic but not as good
as glass Implotec

BU4525AX Related Products

BU4525AX BU4525AF
Description 12A, 800V, NPN, Si, POWER TRANSISTOR 12A, 800V, NPN, Si, POWER TRANSISTOR
Maker NXP NXP
Reach Compliance Code unknown compliant
Shell connection ISOLATED ISOLATED
Maximum collector current (IC) 12 A 12 A
Collector-emitter maximum voltage 800 V 800 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 4.2 4.2
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN
Maximum power consumption environment 45 W 45 W
Maximum power dissipation(Abs) 45 W 45 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
VCEsat-Max 3 V 3 V

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