MMBTA64LT1 datasheet, PDF - EEWORLD Datasheet

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MMBTA64LT1: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), PNP; CategoryDiscrete semiconductor The transistor; File Size110KB，3 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn

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MMBTA64LT1 Overview

Small Signal Bipolar Transistor, 0.5A I(C), PNP

MMBTA64LT1 Parametric

Parameter Name	Attribute value
Maker	LRC
package instruction	,
Reach Compliance Code	unknown
Is Samacsys	N
Maximum collector current (IC)	0.5 A
Configuration	DARLINGTON
Minimum DC current gain (hFE)	10000
Maximum operating temperature	150 °C
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.3 W
surface mount	YES
Nominal transition frequency (fT)	125 MHz
Base Number Matches	1

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LESHAN RADIO COMPANY, LTD.

Darlington Transistors

PNP Silicon

COLLECTOR

MMBTA63LT1

MMBTA64LT1

BASE

EMITTER

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Symbol

CES

CBO

EBO

Value

–30

–10

–500

Unit

Vdc

mAdc

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation FR– 5 Board, (1)

= 25°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

Alumina Substrate, (2) T

= 25°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

θJA

1.8

556

300

2.4

417

–55 to +150

mW/°C

°C/W

mW/°C

°C/W

°C

Symbol

Max

225

Unit

θJA

, T

stg

DEVICE MARKING

MMBTA63LT1 = 2U MMBTA64LT1 = 2V

ELECTRICAL CHARACTERISTICS

= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

= –100

µAdc,

)

Collector Cutoff Current

( V

= –30Vdc)

Emitter Cutoff Current

( V

= –10Vdc )

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

(BR)CEO

CBO

EBO

–30

—

–100

Vdc

nAdc

M30–1/3

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