LDTC115EM3T5G datasheet, PDF - EEWORLD Datasheet

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LDTC115EM3T5G: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon,; CategoryDiscrete semiconductor The transistor; File Size165KB，10 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn

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LDTC115EM3T5G Overview

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon,

LDTC115EM3T5G Parametric

Parameter Name	Attribute value
Maker	LRC
package instruction	,
Reach Compliance Code	unknown
Is Samacsys	N
Maximum collector current (IC)	0.1 A
Minimum DC current gain (hFE)	80
Number of components	1
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.6 W
surface mount	YES
Transistor component materials	SILICON
Base Number Matches	1

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LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistors

NPN Silicon Surface Mount Transistors

With Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base-emitter

resistor. The BRT eliminates these individual components by integrating

them into a single device. The use of a BRT can reduce both system

cost and board space. The device is housed in the SOT-723 package

which is designed for low power surface mount applications.

LDTC114EM3T5G

Series

SOT-723

PIN 3

COLLECTOR

(OUTPUT)

PIN 2

EMITTER

(GROUND)

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

The SOT-723 Package can be Soldered using Wave or Reflow.

Available in 4 mm, 8000 Unit Tape & Reel

These are Pb-Free Devices.

PIN 1

BASE

(INPUT)

MAXIMUM RATINGS

= 25°C unless otherwise noted)

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Symbol

CBO

CEO

Value

100

Unit

Vdc

mAdc

MARKING

DIAGRAM

XX M

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation

= 25°C

Derate above 25°C

Thermal Resistance –

Junction-to-Ambient

Junction Temperature

Storage Temperature Range

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

Symbol

Max

260 (Note 1)

600 (Note 2)

2.0 (Note 1)

4.8 (Note 2)

480 (Note 1)

205 (Note 2)

150

–55 to +150

Unit

mW/°C

°C/W

= Specific Device Code

= Date Code

θJA

stg

°C

Version 1.0

LDTC114EM3T5G_S-1/10

LDTC115EM3T5G Related Products

	LDTC115EM3T5G	LDTC144WM3T5G	LDTC123EM3T5G	LDTC123JM3T5G
Description	Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon,
Maker	LRC	LRC	LRC	LRC
Reach Compliance Code	unknown	unknown	unknown	unknown
Is Samacsys	N	N	N	N
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A
Minimum DC current gain (hFE)	80	80	8	80
Number of components	1	1	1	1
Polarity/channel type	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.6 W	0.6 W	0.6 W	0.6 W
surface mount	YES	YES	YES	YES
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1

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