2A, 800V, 8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
| Parameter Name | Attribute value |
| Maker | NXP |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | unknown |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 800 V |
| Maximum drain current (ID) | 2 A |
| Maximum drain-source on-resistance | 8 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-220AB |
| JESD-30 code | R-PSFM-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 8 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| BUK454-800B,127 | BUK454-800A | BUK454-800B | BUK454-800B127 | BUK454-800A127 | |
|---|---|---|---|---|---|
| Description | 2A, 800V, 8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | TRANSISTOR 2.4 A, 800 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | TRANSISTOR 2 A, 800 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | TRANSISTOR 2 A, 800 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | TRANSISTOR 2.4 A, 800 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power |
| Maker | NXP | NXP | NXP | NXP | NXP |
| package instruction | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| Shell connection | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 800 V | 800 V | 800 V | 800 V | 800 V |
| Maximum drain current (ID) | 2 A | 2.4 A | 2 A | 2 A | 2.4 A |
| Maximum drain-source on-resistance | 8 Ω | 6 Ω | 8 Ω | 8 Ω | 6 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB |
| JESD-30 code | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| Number of components | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 8 A | 9.5 A | 8 A | 8 A | 9.5 A |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON |
京公网安备 11010802033920号
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