TRANSISTOR 15 A, 60 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
| Parameter Name | Attribute value |
| Maker | NXP |
| package instruction | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 30 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 60 V |
| Maximum drain current (ID) | 15 A |
| Maximum drain-source on-resistance | 0.13 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 100 pF |
| JESD-30 code | R-PSSO-G2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 60 W |
| Maximum pulsed drain current (IDM) | 60 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 90 ns |
| Maximum opening time (tons) | 59 ns |
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