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BUK763R4-30B

Description
TRANSISTOR 75 A, 30 V, 0.0034 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size96KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

BUK763R4-30B Overview

TRANSISTOR 75 A, 30 V, 0.0034 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power

BUK763R4-30B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
package instructionPLASTIC, D2PAK-3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)1300 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)75 A
Maximum drain current (ID)75 A
Maximum drain-source on-resistance0.0034 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)255 W
Maximum pulsed drain current (IDM)794 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
BUK753R4-30B; BUK763R4-30B
N-channel TrenchMOS standard level FET
Rev. 01 — 5 January 2006
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS technology.
1.2 Features
s
TrenchMOS technology
s
175
°C
rated
s
Q101 compliant
s
Standard level compatible
1.3 Applications
s
Automotive systems
s
Motors, lamps and solenoids
s
12 V loads
s
General purpose power switching
1.4 Quick reference data
s
E
DS(AL)S
1.3 J
s
I
D
75 A
s
R
DSon
= 2.9 mΩ (typ)
s
P
tot
255 W
2. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning
Description
gate (G)
drain (D)
source (S)
mounting base; connected to drain (D)
mbb076
Simplified outline
mb
mb
Symbol
D
G
S
2
1
3
SOT404 (D2PAK)
1 2 3
SOT78 (TO-220AB)

BUK763R4-30B Related Products

BUK763R4-30B BUK753R4-30B
Description TRANSISTOR 75 A, 30 V, 0.0034 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power TRANSISTOR 198 A, 30 V, 0.0034 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC PACKAGE-3, FET General Purpose Power
Is it Rohs certified? conform to conform to
Maker NXP NXP
package instruction PLASTIC, D2PAK-3 PLASTIC PACKAGE-3
Contacts 3 3
Reach Compliance Code not_compliant compliant
ECCN code EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 1300 mJ 1300 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V
Maximum drain current (Abs) (ID) 75 A 75 A
Maximum drain current (ID) 75 A 198 A
Maximum drain-source on-resistance 0.0034 Ω 0.0034 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSFM-T3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 2 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 255 W 255 W
Maximum pulsed drain current (IDM) 794 A 794 A
Certification status Not Qualified Not Qualified
surface mount YES NO
Terminal surface Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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