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BUK7830-30

Description
TRANSISTOR 12.8 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size201KB,10 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BUK7830-30 Overview

TRANSISTOR 12.8 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

BUK7830-30 Parametric

Parameter NameAttribute value
MakerNXP
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresESD PROTECTED
Avalanche Energy Efficiency Rating (Eas)60 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)12.8 A
Maximum drain-source on-resistance0.03 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)23.6 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
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