Philips Semiconductors
Product specification
Insulated Gate Bipolar Transistor
Protected Logic-Level IGBT
GENERAL DESCRIPTION
Protected N-channel logic-level
insulated gate bipolar power
transistor in a plastic envelope,
intended for automotive ignition
applications. The device has
built-in zener diodes providing
active collector voltage clamping
and ESD protection up to 2 kV.
BUK856-400 IZ
QUICK REFERENCE DATA
SYMBOL PARAMETER
V
(CL)CER
V
CEsat
I
C
P
tot
E
CERS
Collector-emitter clamp voltage
Collector-emitter on-state voltage
Collector current (DC)
Total power dissipation
Clamped energy dissipation
MIN. TYP. MAX. UNIT
370
410
500
2.2
20
100
300
V
V
A
W
mJ
PINNING - TO220AB
PIN
1
2
3
tab
gate
collector
emitter
collector
DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
c
g
1 23
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
CE
V
CE
±V
GE
I
C
I
C
I
CM
I
CLM
E
CERS
E
CERR1
E
ECR1
P
tot
T
stg
T
j
PARAMETER
Collecter-emitter voltage
Collector-emitter voltage
Gate-emitter voltage
Collector current (DC)
Collector current (DC)
Collector current (pulsed peak value,
on-state)
Collector current (clamped inductive
load)
Clamped turn-off energy
(non-repetitive)
Clamped turn-off energy (repetitive)
Reverse avalanche energy
(repetitive)
Total power dissipation
Storage temperature
Operating Junction Temperature
CONDITIONS
t
p
≤
500
µs
Continuous
-
T
mb
= 100 ˚C
T
mb
= 25 ˚C
T
mb
= 25 ˚C; t
p
≤
10 ms;
V
CE
≤
15 V
1 kΩ
≤
R
G
≤
10 kΩ
T
mb
= 25 ˚C; I
C
= 10 A; R
G
= 1 kΩ;
see Figs. 23,24
T
mb
= 100 ˚C; I
C
= 8 A; R
G
= 1 kΩ;
f = 50 Hz
I
E
= 1 A; f = 50 Hz
T
mb
= 25 ˚C
-
-
MIN.
-
-20
-
-
-
-
-
-
-
-
-
-55
-40
MAX.
500
50
12
10
20
25
10
300
125
5
125
150
150
UNIT
V
V
V
A
A
A
A
mJ
mJ
mJ
W
˚C
˚C
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model
(100 pF, 1.5 kΩ)
MIN.
-
MAX.
2
UNIT
kV
1
This applies to short-term operation in ignition circuits with open-secondary ignition coil.
November 1998
1
Rev. 1.400
Philips Semiconductors
Product specification
Insulated Gate Bipolar Transistor
Protected Logic-Level IGBT
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
In free air
TYP.
-
60
BUK856-400 IZ
MAX.
1.0
-
UNIT
K/W
K/W
STATIC CHARACTERISTICS
T
mb
= 25 ˚C unless otherwise specified
SYMBOL
V
(BR)CG
V
(BR)EC
±V
(BR)GES
V
GE(TO)
V
GE(TO)
I
CES
I
CES
I
EC
I
EC
I
GES
V
CEsat
PARAMETER
Collector-gate zener
breakdown voltage
Reverse collector-emitter
breakdown voltage
Gate-emitter breakdown
voltage
Gate threshold voltage
Gate threshold voltage
Zero gate voltage collector
current
Zero gate voltage collector
current
Reverse collector current
Reverse collector current
Gate emitter leakage current
Collector-emitter on-state
voltage
CONDITIONS
2 mA
≤
-I
G
≤
5 mA; -40
≤
T
j
≤150˚C
I
E
= 10 mA
I
G
=
±
1 mA
V
CE
= V
GE
; I
C
= 1 mA
V
CE
= V
GE
; I
C
= 1 mA;
-40
≤
T
j
≤150˚C
V
CE
= 50 V; V
GE
= 0 V; T
j
= 25 ˚C
T
j
= 125 ˚C
V
CE
= -20 V
V
CE
= -20 V; T
j
= 125˚C
V
GE
=
±6
V
T
j
= 150˚C
V
GE
= 4.5 V; I
C
= 8 A
V
GE
= 3.5 V; I
C
= 6 A;
-40
≤
T
j
≤150˚C
MIN.
370
20
12
1
0.6
-
-
-
-
-
-
-
-
TYP.
410
30
16
1.5
-
0.01
0.01
0.2
2
0.1
5
1.2
1.2
MAX.
500
50
20
2
2.4
10
1
5
20
1
100
2.2
2.2
UNIT
V
V
V
V
V
µA
mA
mA
mA
µA
µA
V
V
DYNAMIC CHARACTERISTICS
T
mb
= 25 ˚C unless otherwise specified
SYMBOL
V
(CL)CER
PARAMETER
CONDITIONS
MIN.
370
TYP.
410
MAX.
500
UNIT
V
Collector-emitter clamp voltage R
G
= 1 kΩ; I
C
= 10 A;
(peak value)
-40
≤
T
j
≤150˚C;
Inductive load; see
Figs. 23,24
Forward transconductance
Input capacitance
Output capacitance
Feedback capacitance
Turn-off delay time
Fall time
Crossover Time
Turn-off Energy loss
V
CE
= 15 V; I
C
= 4 A
V
GE
= 0 V; V
CE
= 25 V; f = 1 MHz
g
fe
C
ies
C
oes
C
res
t
d off
t
f
t
c
E
off
5.5
850
-
-
-
-
-
-
15
940
95
30
13
6
12
13
20
1200
130
50
18
10
-
-
S
pF
pF
pF
µs
µs
µs
mJ
I
C
= 8 A; V
CL
= 300 V; R
G
= 1 kΩ;
V
GE
= 5 V; T
j
= 125˚C;
Inductive load; see Figs. 20,21
November 1998
2
Rev. 1.400
Philips Semiconductors
Product specification
Insulated Gate Bipolar Transistor
Protected Logic-Level IGBT
BUK856-400 IZ
1E+01
Zth(j-mb) / (K/W)
120
110
100
90
80
70
60
50
40
P
D
t
p
t
D= p
T
PD%
Normalised Power Derating
1E+00
D=
0.5
0.2
1E-01
0.1
0.05
0.02
1E-02
0
30
20
10
0
1E+01
t
T
1E-03
1E-07
1E-05
1E-03
t/s
1E-01
0
20
40
60
80
100
Tmb / C
120
140
Fig.1. Transient thermal impedance
Z
th j-mb
= f(t) ; parameter D = t
p
/T
IC / A
I CLM
10
BUK8Y6-400IZ
Fig.4. Normalised power dissipation.
PD% = 100.P
D
/P
D 25˚C
= f(T
mb
)
ICLM / A
BUK8Y6-400IZ
15
10
Self-clamped
1
5
0.1
0
200
VCE / V
400
600
0
0
50
100
150
dVCE/dt (V/us)
200
Fig.2. Turn-off Safe Operating Area
conditions: T
j
≤
T
jmax.
; R
G
≥
1 kΩ
VCE / V
Tj / C =
150
25
-40
Fig.5. Derating of I
CLM
with turn-off dV
CE
/dt
conditions: V
CE
≤
500 V; T
j
≤
T
jmax.
VCE / V
Tj / C =
150
25
-40
3
PMG35A
2
PMG35A
1.5
2
1
1
0.5
0
0
4
8
12
16
IC / A
20
24
0
0
4
8
12
16
IC / A
20
24
Fig.3. Typical On-state Voltage
V
CEsat
= f(I
C
); parameter T
j
; conditions: V
GE
= 3.5 V
Fig.6. Typical On-state Voltage
V
CEsat
= f(I
C
); parameter T
j
; conditions: V
GE
= 5 V
November 1998
3
Rev. 1.400
Philips Semiconductors
Product specification
Insulated Gate Bipolar Transistor
Protected Logic-Level IGBT
BUK856-400 IZ
30
IC / A
5
4
PMG35A
VGE / V = 4
3
1E-2
1E-3
IE-4
+/- IGES / A
PMG35A
20
2.8
2.6
10
2.4
2.2
2
0
0
2
4
VCE / V
6
8
10
1E-5
1E-6
1E-7
1E-8
1E-9
0
5
10
VGE / V
15
20
Fig.7. Typical Output Characteristics
I
C
= f(V
CE
); parameter V
GE
; conditions: T
j
= 25˚C
IC / A
150
Tj / C = 25
-40
Fig.10. Typical gate-emitter charcteristics
I
GES
= f(V
GE
); conditions: V
CE
= 0 V; T
j
= 25˚C
ICES / mA
150
Tj / C = 25
-40
30
PMG35A
10
PMG35A
20
1
10
0
0
1
2
VGE / V
3
4
0.1
350
370
390
410
VCE / V
430
450
Fig.8. Typical Transfer Characteristics
I
C
= f(V
GE
), parameter T
j
; conditions: V
CE
= 10 V
gfe / S
PMG35A
Fig.11. Typical collector clamp characteristics
I
CES
= f(V
CE
); parameter T
j;
conditions: V
GE
= 0 V
35
30
25
20
2.5
VGE(TO) / V
BUK856-400IZ
2
max.
1.5
15
10
5
0
0
150
Tj / C = 25
-40
typ.
1
min.
10
IC / A
20
30
0.5
-40 -20
0
20
40 60
Tj / C
80 100 120 140
Fig.9. Typical Forward Transconductance
g
fe
= f(I
C
); parameter T
j;
conditions: V
CE
= 10 V
Fig.12. Gate Threshold Voltage
V
GE(TO)
= f(T
j
); conditions: I
C
= 1 mA; V
CE
= V
GE
November 1998
4
Rev. 1.400
Philips Semiconductors
Product specification
Insulated Gate Bipolar Transistor
Protected Logic-Level IGBT
BUK856-400 IZ
1E-01
IC / A
SUB-THRESHOLD CONDUCTION
100
t / us, E / mJ
PMG35A
1E-02
2%
98 %
td(off)
E(off)
typ
1E-03
10
1E-04
tf
1E-05
1E-06
0
0.4
0.8
1.2
VGE / V
1.6
2
2.4
1
0
1
2
3
Rg / kOhm
4
5
Fig.13. Sub-threshold collector current
I
C
= f(V
GE
); T
j
= 25˚C; V
CE
= V
GE
VGE / V
PMG35A
Fig.16. Typical Switching Characteristics vs. R
G
conditions: T
j
=125 ˚C; I
C
=8 A; V
CL
=300 V; L
C
=5 mH.
t / us, E / mJ
15
PMG35A
6
5
Vcc / V = 12
4
td(off)
300
3
2
1
0
0
10
20
Qg / nC
30
10
E(off)
5
tf
0
0
50
Tj / C
100
150
Fig.14. Typical Turn-on Gate Charge Characteristics
V
GE
= f(Q
G
); conditions: I
C
= 8 A.
C / pf
pmg35a
Fig.17. Typical Switching Characteristics vs. T
j
conditions: I
C
=8 A; V
CL
=300 V; R
G
=1 k
Ω
; L
C
=5 mH.
t / us, E / mJ
15
td(off)
10000
PMG35A
1000
Cies
10
tf
100
Coes
5
10
0.01
0.1
1
10
VCE / V
100
Cres
0
0
E(off)
1000
2
4
IC / A
6
8
10
Fig.15. Typical Capacitances C
ies
, C
oes
, C
res
C = f(V
CE
); conditions: V
GE
= 0 V; f = 1 MHz
Fig.18. Typical Switching Characteristics vs. I
C
conditions: T
j
=125 ˚C V
CL
=300 V; R
G
=1 k
Ω
; L
C
=5 mH.
November 1998
5
Rev. 1.400
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