DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D119
BYD33 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 Jun 05
1996 Sep 18
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Guaranteed avalanche energy
absorption capability
•
Available in ammo-pack.
handbook, 4 columns
BYD33 series
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec™
(1)
technology.
This package is hermetically sealed
k
a
MAM123
Fig.1 Simplified outline (SOD81) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
BYD33D
BYD33G
BYD33J
BYD33K
BYD33M
BYD33U
BYD33V
V
R
continuous reverse voltage
BYD33D
BYD33G
BYD33J
BYD33K
BYD33M
BYD33U
BYD33V
I
F(AV)
average forward current
BYD33D to M
BYD33U and V
I
F(AV)
average forward current
BYD33D to M
BYD33U and V
I
FRM
repetitive peak forward current
BYD33D to M
BYD33U and V
T
tp
= 55
°C;
lead length = 10 mm;
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
T
amb
= 65
°C;
PCB mounting (see
Fig.19); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
T
tp
= 55
°C;
see Figs 6 and 7
−
−
12
11
A
A
−
−
−
−
−
−
−
−
−
−
−
200
400
600
800
1000
1200
1400
1.30
1.26
V
V
V
V
V
V
V
A
A
PARAMETER
repetitive peak reverse voltage
−
−
−
−
−
−
−
200
400
600
800
1000
1200
1400
V
V
V
V
V
V
V
CONDITIONS
MIN.
MAX.
UNIT
0.70
0.67
A
A
1996 Sep 18
2
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
SYMBOL
I
FRM
PARAMETER
repetitive peak forward current
BYD33D to M
BYD33U and V
I
FSM
non-repetitive peak forward current
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
−
−
−65
see Figs 12 and 13
−65
CONDITIONS
T
amb
= 65
°C;
see Figs 8 and 9
−
−
−
BYD33 series
MIN.
MAX.
7
6
20
A
A
A
UNIT
E
RSM
non-repetitive peak reverse
avalanche energy
BYD33D to J
BYD33K to V
10
7
+175
+175
mJ
mJ
°C
°C
T
stg
T
j
storage temperature
junction temperature
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
I
F
= 1 A; T
j
= T
j max
;
see Figs 14 and 15
I
F
= 1 A;
see Figs 14 and 15
V
(BR)R
reverse avalanche breakdown
voltage
BYD33D
BYD33G
BYD33J
BYD33K
BYD33M
BYD33U
BYD33V
I
R
reverse current
V
R
= V
RRMmax
;
see Fig.16
V
R
= V
RRMmax
;
T
j
= 165
°C;
see Fig.16
t
rr
reverse recovery time
BYD33D to J
BYD33K and M
BYD33U and V
C
d
diode capacitance
f = 1 MHz; V
R
= 0 V;
see Figs 17 and 18
when switched from
I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A
see Fig.21
I
R
= 0.1 mA
300
500
700
900
1100
1300
1500
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
1
100
V
V
V
V
V
V
V
µA
µA
MIN.
−
−
TYP.
−
−
MAX.
1.1
1.3
V
V
UNIT
−
−
−
−
−
−
−
20
250
300
500
−
ns
ns
ns
pF
1996 Sep 18
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
SYMBOL
dI
R
--------
dt
PARAMETER
maximum slope of reverse recovery
current
BYD33D to J
BYD33K to V
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
lead length = 10 mm
CONDITIONS
when switched from
I
F
= 1 A to V
R
≥
30 V
and dI
F
/dt =
−1
A/µs;
see Fig.20
MIN.
BYD33 series
TYP.
MAX.
UNIT
−
−
−
−
6
5
A/µs
A/µs
VALUE
60
120
UNIT
K/W
K/W
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig.19.
For more information please refer to the
“General Part of associated Handbook”.
1996 Sep 18
4
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
GRAPHICAL DATA
MGA857
BYD33 series
handbook, halfpage
1.6
handbook, halfpage
1.6
MLB905
I F(AV)
(A)
1.2
lead length 10 mm
I F(AV)
(A)
1.2
lead length 10 mm
0.8
0.8
0.4
0.4
0
0
BYD33D to M
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Switched mode application.
100
T tp (
o
C)
200
0
0
BYD33U and V
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Switched mode application.
100
T tp (
o
C)
200
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
1.2
MLB902
handbook, halfpage
1.2
MLB906
I F(AV)
(A)
0.8
I F(AV)
(A)
0.8
0.4
0.4
0
0
100
Tamb ( C)
o
200
0
0
100
Tamb (
o
C)
200
BYD33D to M
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig.19.
Switched mode application.
BYD33U and V
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig.19.
Switched mode application.
Fig.4
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
Fig.5
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
1996 Sep 18
5
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