BYM56E datasheet, PDF - EEWORLD Datasheet

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BYM56E: Description1.4A, 1000V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, GLASS PACKAGE-2; CategoryDiscrete semiconductor diode; File Size53KB，7 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BYM56E Overview

1.4A, 1000V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, GLASS PACKAGE-2

BYM56E Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	NXP
package instruction	O-LALF-W2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
application	GENERAL PURPOSE
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.25 V
JESD-30 code	O-LALF-W2
Maximum non-repetitive peak forward current	80 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Maximum output current	1.4 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	1000 V
Maximum reverse current	1 µA
Maximum reverse recovery time	3 µs
surface mount	NO
technology	AVALANCHE
Terminal form	WIRE
Terminal location	AXIAL

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DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, 2 columns

M3D118

BYM56 series

Controlled avalanche rectifiers

Product speciﬁcation

Supersedes data of April 1992

1996 May 24

BYM56E Related Products

	BYM56E	BYM56A	BYM56AT/R	BYM56B	BYM56C	BYM56D	BYM56DT/R	BYM56ET/R	BYM56BT/R	BYM56CT/R
Description	1.4A, 1000V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, GLASS PACKAGE-2	1.4A, 200V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, GLASS PACKAGE-2	DIODE 1.4 A, 200 V, SILICON, RECTIFIER DIODE, Rectifier Diode	1.4A, 400V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, GLASS PACKAGE-2	1.4A, 600V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, GLASS PACKAGE-2	DIODE 1.4 A, 800 V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode	DIODE 1.4 A, 800 V, SILICON, RECTIFIER DIODE, Rectifier Diode	1.4A, 1000V, SILICON, RECTIFIER DIODE	1.4A, 400V, SILICON, RECTIFIER DIODE	1.4A, 600V, SILICON, RECTIFIER DIODE
Maker	NXP	NXP	NXP	NXP	NXP	NXP	NXP	NXP	NXP	NXP
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	compliant	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.25 V	1.25 V	1.25 V	1.25 V	1.25 V	1.25 V	1.25 V	1.25 V	1.25 V	1.25 V
JESD-30 code	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
Maximum non-repetitive peak forward current	80 A	80 A	80 A	80 A	80 A	80 A	80 A	80 A	80 A	80 A
Number of components	1	1	1	1	1	1	1	1	1	1
Phase	1	1	1	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2	2	2	2
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Maximum output current	1.4 A	1.4 A	1.4 A	1.4 A	1.4 A	1.4 A	1.4 A	1.4 A	1.4 A	1.4 A
Package body material	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	1000 V	200 V	200 V	400 V	600 V	800 V	800 V	1000 V	400 V	600 V
Maximum reverse current	1 µA	1 µA	1 µA	1 µA	1 µA	1 µA	1 µA	1 µA	1 µA	1 µA
Maximum reverse recovery time	3 µs	3 µs	3 µs	3 µs	3 µs	3 µs	3 µs	3 µs	3 µs	3 µs
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
technology	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Is it Rohs certified?	incompatible	incompatible	-	incompatible	incompatible	incompatible	-	incompatible	-	-
package instruction	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	-	O-LALF-W2	O-LALF-W2

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