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BYV2100T/R

Description
1.3A, 100V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size58KB,8 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BYV2100T/R Overview

1.3A, 100V, SILICON, RECTIFIER DIODE

BYV2100T/R Parametric

Parameter NameAttribute value
MakerNXP
package instructionO-LALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationFAST SOFT RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-LALF-W2
Maximum non-repetitive peak forward current50 A
Number of components1
Phase1
Number of terminals2
Maximum output current1.3 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.0125 µs
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BYV2100
Fast soft-recovery
controlled avalanche rectifier
Product specification
1996 Oct 07
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