BYX103GT/R datasheet, PDF - EEWORLD Datasheet

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BYX103GT/R: DescriptionDIODE 0.31 A, 10000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode; CategoryDiscrete semiconductor diode; File Size47KB，8 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BYX103GT/R Overview

DIODE 0.31 A, 10000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode

BYX103GT/R Parametric

Parameter Name	Attribute value
Maker	NXP
package instruction	E-LALF-W2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	E-LALF-W2
Number of components	1
Number of terminals	2
Maximum output current	0.31 A
Package body material	GLASS
Package shape	ELLIPTICAL
Package form	LONG FORM
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	10000 V
Maximum reverse recovery time	0.175 µs
surface mount	NO
technology	AVALANCHE
Terminal form	WIRE
Terminal location	AXIAL

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DISCRETE SEMICONDUCTORS

DATA SHEET

M3D354

BYX101G; BYX102G; BYX103G;

BYX104G

High-voltage soft-recovery

controlled avalanche rectifiers

Product speciﬁcation

Supersedes data of 1996 Oct 03

2000 Jan 13

BYX103GT/R Related Products

	BYX103GT/R	BYX102GT/R	BYX101GT/R	BYX101G	BYX102G	BYX103G	BYX104G	BYX104GT/R
Description	DIODE 0.31 A, 10000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode	DIODE 0.36 A, 10000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode	DIODE 0.4 A, 10000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode	DIODE 0.4 A, 10000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode	DIODE 0.36 A, 10000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode	DIODE 0.31 A, 10000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode	DIODE 0.225 A, 10000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode	DIODE 0.225 A, 10000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
Maker	NXP	NXP	NXP	NXP	NXP	NXP	NXP	NXP
package instruction	E-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2
Contacts	2	2	2	2	2	2	2	2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	E-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2
Number of components	1	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2	2
Maximum output current	0.31 A	0.36 A	0.4 A	0.4 A	0.36 A	0.31 A	0.225 A	0.225 A
Package body material	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS
Package shape	ELLIPTICAL	ELLIPTICAL	ELLIPTICAL	ELLIPTICAL	ELLIPTICAL	ELLIPTICAL	ELLIPTICAL	ELLIPTICAL
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	10000 V	10000 V	10000 V	10000 V	10000 V	10000 V	10000 V	10000 V
Maximum reverse recovery time	0.175 µs	0.35 µs	0.6 µs	0.6 µs	0.35 µs	0.175 µs	0.05 µs	0.05 µs
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
technology	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL

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