BYX108GAMO datasheet, PDF - EEWORLD Datasheet

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BYX108GAMO: DescriptionDIODE 0.34 A, 5000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, MSB026, 2 PIN, Signal Diode; CategoryDiscrete semiconductor diode; File Size77KB，10 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BYX108GAMO Overview

DIODE 0.34 A, 5000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, MSB026, 2 PIN, Signal Diode

BYX108GAMO Parametric

Parameter Name	Attribute value
Maker	NXP
package instruction	O-LALF-W2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	O-LALF-W2
Number of components	1
Number of terminals	2
Maximum output current	0.34 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	5000 V
Maximum reverse recovery time	0.05 µs
surface mount	NO
technology	AVALANCHE
Terminal form	WIRE
Terminal location	AXIAL

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DISCRETE SEMICONDUCTORS

DATA SHEET

M3D354

BYX105G; BYX106G; BYX107G;

BYX108G

High-voltage soft-recovery

controlled avalanche rectifiers

Product speciﬁcation

Supersedes data of 1996 Oct 03

2000 Jan 13

BYX108GAMO Related Products

	BYX108GAMO	934045080113	934045090153	934045080153	934045090113	934045110113	934045110153	BYX105GAMO	934045100153	934045100113
Description	DIODE 0.34 A, 5000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, MSB026, 2 PIN, Signal Diode	DIODE 0.65 A, 5000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, MSB026, 2 PIN, Signal Diode	DIODE 0.575 A, 5000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, MSB026, 2 PIN, Signal Diode	DIODE 0.65 A, 5000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, MSB026, 2 PIN, Signal Diode	DIODE 0.575 A, 5000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, MSB026, 2 PIN, Signal Diode	DIODE 0.34 A, 5000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, MSB026, 2 PIN, Signal Diode	DIODE 0.34 A, 5000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, MSB026, 2 PIN, Signal Diode	DIODE 0.65 A, 5000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, MSB026, 2 PIN, Signal Diode	DIODE 0.48 A, 5000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, MSB026, 2 PIN, Signal Diode	DIODE 0.48 A, 5000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, MSB026, 2 PIN, Signal Diode
Maker	NXP	NXP	NXP	NXP	NXP	NXP	NXP	NXP	NXP	NXP
package instruction	O-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2	O-LALF-W2	E-LALF-W2	E-LALF-W2
Contacts	2	2	2	2	2	2	2	2	2	2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	O-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2	O-LALF-W2	E-LALF-W2	E-LALF-W2
Number of components	1	1	1	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2	2	2	2
Maximum output current	0.34 A	0.65 A	0.575 A	0.65 A	0.575 A	0.34 A	0.34 A	0.65 A	0.48 A	0.48 A
Package body material	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS
Package shape	ROUND	ELLIPTICAL	ELLIPTICAL	ELLIPTICAL	ELLIPTICAL	ELLIPTICAL	ELLIPTICAL	ROUND	ELLIPTICAL	ELLIPTICAL
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	5000 V	5000 V	5000 V	5000 V	5000 V	5000 V	5000 V	5000 V	5000 V	5000 V
Maximum reverse recovery time	0.05 µs	0.6 µs	0.35 µs	0.6 µs	0.35 µs	0.05 µs	0.05 µs	0.6 µs	0.175 µs	0.175 µs
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
technology	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Maximum operating temperature	-	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	-	175 °C	175 °C
Minimum operating temperature	-	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-	-65 °C	-65 °C
Guideline	-	IEC-134	IEC-134	IEC-134	IEC-134	IEC-134	IEC-134	-	IEC-134	IEC-134

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