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BYX132GL

Description
DIODE 0.05 A, 2000 V, SILICON, SIGNAL DIODE, Signal Diode
CategoryDiscrete semiconductor    diode   
File Size43KB,8 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BYX132GL Overview

DIODE 0.05 A, 2000 V, SILICON, SIGNAL DIODE, Signal Diode

BYX132GL Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNXP
package instructionE-LALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)3.5 V
JESD-30 codeE-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current0.05 A
Package body materialGLASS
Package shapeELLIPTICAL
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage2000 V
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D354
BYX132GL
High-voltage car ignition diode
Product specification
Supersedes data of 2000 Jan 13
2001 Oct 02

BYX132GL Related Products

BYX132GL 934054744113
Description DIODE 0.05 A, 2000 V, SILICON, SIGNAL DIODE, Signal Diode DIODE 0.05 A, 2000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
Maker NXP NXP
package instruction E-LALF-W2 E-LALF-W2
Reach Compliance Code unknown unknow
ECCN code EAR99 EAR99
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code E-LALF-W2 E-LALF-W2
Number of components 1 1
Number of terminals 2 2
Maximum output current 0.05 A 0.05 A
Package body material GLASS GLASS
Package shape ELLIPTICAL ELLIPTICAL
Package form LONG FORM LONG FORM
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 2000 V 2000 V
surface mount NO NO
Terminal form WIRE WIRE
Terminal location AXIAL AXIAL
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