DATA SHEET
BC846W,BC847W,BC848W,BC849W,BC850W SERIES
NPN GENERAL PURPOSE TRANSISTORS
VOLTAGE
FEATURES
• General purpose amplifier applications
• NPN epitaxial silicon, planar design
• Collector current IC = 100mA
• Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
Pb free: 98.5% Sn above
.087(2.2)
.070(1.8)
.054(1.35)
.045(1.15)
.004(.10)MIN.
.087(2.2)
.078(2.0)
30/45/65 Volts
CURRENT
150 mWatts
SOT-323
Unit: inch (mm)
MECHANICAL DATA
Case: SOT-323, Plastic
Terminals: Solderable per MIL-STD-202, Method 208
Approx. Weight: 0.0052 gram
D evi e M ar i g:
c
kn
B C 846AW =46A
B C 846B W =46B
B C 847AW =47A
B C 847B W =47B
B C 847C W =47C
B C 848AW =48A
B C 848B W =48B
B C 848C W =48C
B C 849B W =49B
B C 849C W =49C
B C 850B W =50B
B C 850C W =50C
.056(1.40)
.047(1.20)
.006(.15)
.002(.05)
.004(.10)MAX.
.016(.40)
.078(.20)
ABSOLUTE RATINGS
PARAMETER
Collector - Emitter Voltage
B C 846
BC847,BC850
BC848,BC849
B C 846
BC847,BC850
BC848,BC849
B C 846
BC847,BC850
BC848,BC849
Symbol
V
CEO
Value
65
45
30
80
50
30
6.0
6.0
5.0
100
Units
V
Collector - Base Voltage
V
CBO
.044(1.1)
.035(0.9)
V
Emitter - Base Voltage
V
EBO
V
Collector Current - Continuous
I
C
mA
THERMAL CHARACTERISTICS
PA R A M E TE R
M ax P ow erD i si aton ( ot 1)
s p i
N e
Ther alR esi t nce ,Juncton t A m bi nt
m
sa
i o
e
Juncton Tem per t r
i
aue
S t r ge Tem per t r
oa
aue
S ym bol
P
TO T
Rθ
JA
T
J
STG
TI
Val e
u
150
833
- 5 t 150
5 o
- 5 t 150
5 o
U nis
t
mW
O
C/
W
O
C
C
O
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
STAD-JUL.06.2004
PAGE . 1
ELECTRICAL CHARACTERISTICS
PA RA M E TE R
B C 8 4 6 A W, B W
C o l l e c t o r - E m i t t e r B r e a k d o w n V o l t a g e B C 8 4 7 A W / B W / C W, B C 8 5 0 B W / C W
B C 8 4 8 A W / B W / C W, B C 8 4 9 B W / C W
C o lle c to r - B a s e B re a k d o wn Vo lta g e
B C 8 4 6 A W, B W
B C 8 4 7 A W / B W / C W, B C 8 5 0 B W / C W
B C 8 4 8 A W / B W / C W, B C 8 4 9 B W / C W
B C 8 4 6 A W, B W
B C 8 4 7 A W / B W / C W, B C 8 5 0 B W / C W
B C 8 4 8 A W / B W / C W, B C 8 4 9 B W / C W
S ym b o l
Te s t C o n d i t i o n
M IN .
65
45
30
80
50
30
6 .0
6 .0
5 .0
-
-
T YP.
MA X .
U ni t s
V
(BR)
C E O IC = 1 0 m A , IB = 0
-
-
V
V
(BR)
C B O IC = 1 0 u A , IE = 0
-
-
V
E mi tte r - B a s e B re a k d o wn Vo lta g e
V
(BR)
E B O IE = 1 0 u A , IC = 0
-
-
V
E m i t t e r - B a s e C ut o f f C ur r e nt
C o l l e c t o r - B a s e C ut o f f C ur r e nt
D C C ur r e nt G a i n
B C 8 4 6 ~ B C 8 4 8 S uf f i x " AW "
B C 8 4 6 ~ B C 8 5 0 S uf f i x " B W "
B C 8 4 7 ~ B C 8 5 0 S uf f i x " C W "
B C 8 4 6 ~ B C 8 4 8 S uf f i x " AW "
B C 8 4 6 ~ B C 8 5 0 S uf f i x " B W "
B C 8 4 7 ~ B C 8 5 0 S uf f i x " C W "
I
EBO
I
C BO
V E B =5
V C B = 3 0 V , IE = 0
V C B = 3 0 V , IE = 0 , T
J
= 1 5 0
O
C
IC = 1 0 u A , V C E = 5 V
-
-
90
150
270
180
290
520
-
0 .7
0 .9
0 .6 6 0
-
-
100
15
5 .0
-
nA
nA
uA
-
h
F E
-
D C C ur r e nt G a i n
h
F E
IC = 2 . 0 m A , V C E = 5 V
IC = 1 0 m A , IB = 0 . 5 m A
IC = 1 0 0 m A , IB = 5 . 0 m A
IC = 1 0 m A , IB = 0 . 5 m A
IC = 1 0 0 m A , IB = 5 . 0 m A
IC = 2 m A , V C E = 5 . 0 V
IC = 1 0 m A , V C E = 5 . 0 V
V C B = 1 0 V , IE = 0 , f = 1 M H
11 0
200
420
-
-
0 .5 8
-
-
220
450
800
0 .2 5
0 .6
-
0 .7 0
0 .7 7
4 .5
-
C o l l e c t o r - E m i t t e r S a t ur a t i o n Vo l t a g e
B a s e - E m i t t e r S a t ur a t i o n Vo l t a g e
B a s e - E mi tte r Vo lta g e
C o l l e c t o r - B a s e C a p a c i t a nc e
V
C E(SAT)
V
C E(SAT)
V
C E(SAT)
C
C BO
V
V
V
pF
STAD-JUL.06.2004
PAGE . 2
Embedded System
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