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LBZT52C4V7T1G

Description
Zener Diode, 4.7V V(Z), 6.4%, 0.5W,
CategoryDiscrete semiconductor    diode   
File Size633KB,3 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Environmental Compliance
Download Datasheet Parametric View All

LBZT52C4V7T1G Overview

Zener Diode, 4.7V V(Z), 6.4%, 0.5W,

LBZT52C4V7T1G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLRC
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance80 Ω
Number of components1
Maximum operating temperature150 °C
Maximum power dissipation0.5 W
Nominal reference voltage4.7 V
surface mountYES
Maximum voltage tolerance6.4%
Working test current5 mA
Base Number Matches1
LESHAN RADIO COMPANY, LTD.
Surface Mount Zener Diodes
Features:
*500mw Power Dissipation
*Ideal for Surface Mountted Application
*Zener Breakdown Voltage Range 2.4V to 51V
*Pb-Free package is available
*S- Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC-Q101 Qualified and
PPAP Capable.
Mechanical Data:
*Case : SOD-123 Molded plastic
*Terminals: Solderable per MIL-STD-202, Method 208
*Polarity: Cathode Indicated by Polarity Band
*Marking: Marking Code (See Table on Page 2)
*Weigh: 0.01grams(approx)
LBZT52C2V4T1G Series
S-LBZT52C2V4T1G Series
1
2
SOD-123
Equivalent Circuit Diagram
1
2
Cathode
Anode
Maximum Ratings and Electrical Characteristics
Characteristics
Total Power Dissipation on FR-5 Board
(1)
Thermal Resistance Junction to Ambient Air
(1)
Forward Voltage @ IF=10mA
Junction and Storage Temperature Range
NOTES:
(TA=25 C Unless Otherwise Noted)
Symbol
P
D
R
JA
Value
500
0
305
0.9
-55 to +150
Unit
mW
C/W
V
C
VF
T
J
,T
STG
1. Device mounted on ceramic PCB; 7.6mm 9.4mm 0.87mm with pad areas 25mm
2
-
Ratings and Characteristic curves
0.6
P
D
,POWER DISSIPATION(W)
0.5
0.4
0.3
0.2
0.1
0
,
0
25
50
-
T
A
,AMBIENT TEMPERATURE( C)
FIG. 1 Power Disspation vs Ambient temperaute
O
-
-
75
100
125
150
Rev.O 1/3
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