DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BZX99 series
Voltage regulator diodes
Product specification
1999 May 31
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES
•
Total power dissipation: max. 300 mW
•
Tolerance:
±5%
•
Working voltage range: nom. 2.4 to 15 V (E24 range)
•
Improved I
z
/V
z
characteristics at low currents
(I
z
= 50
µA).
This results in a noise free and sharp
breakdown knee.
APPLICATIONS
•
General regulation functions, where low noise at low
currents is required
•
Low-power consumption applications (e.g. hand-held
applications).
DESCRIPTION
Low-power low noise voltage regulator diodes in small
SOT23 plastic SMD packages.
The diodes are available in the normalized E24
±5%
tolerance range. The series consists of 20 types with
nominal working voltages from 2.4 to 15 V.
Top view
handbook, halfpage
2
BZX99 series
PINNING
PIN
1
2
3
anode
not connected
cathode
DESCRIPTION
1
2
n.c.
3
3
1
MAM243
Fig.1 Simplified outline (SOT23) and symbol.
MARKING
TYPE
NUMBER
BZX99-C2V4
BZX99-C2V7
BZX99-C3V0
BZX99-C3V3
BZX99-C3V6
MARKING
CODE
XL
XM
XN
XP
XR
TYPE
NUMBER
BZX99-C3V9
BZX99-C4V3
BZX99-C4V7
BZX99-C5V1
BZX99-C5V6
MARKING
CODE
XS
XT
XA
XB
XC
TYPE
NUMBER
BZX99-C6V2
BZX99-C6V8
BZX99-C7V5
BZX99-C8V2
BZX99-C9V1
MARKING
CODE
XD
XE
XU
XV
XW
TYPE
NUMBER
BZX99-C10
BZX99-C11
BZX99-C12
BZX99-C13
BZX99-C15
MARKING
CODE
XX
XY
XZ
X2
X3
1999 May 31
2
Philips Semiconductors
Product specification
Voltage regulator diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
I
F
I
ZSM
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printed circuit-board.
ELECTRICAL CHARACTERISTICS
Total BZX99-C series
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
BZX99-A/B/C2V4
BZX99-A/B/C2V7
BZX99-A/B/C3V0
BZX99-A/B/C3V3
BZX99-A/B/C3V6
BZX99-A/B/C3V9
BZX99-A/B/C4V3
BZX99-A/B/C4V7
BZX99-A/B/C5V1
BZX99-A/B/C5V6
BZX99-A/B/C6V2
BZX99-A/B/C6V8
BZX99-A/B/C7V5
BZX99-A/B/C8V2
BZX99-A/B/C9V1
BZX99-A/B/C10
BZX99-A/B/C11
BZX99-A/B/C12
BZX99-A/B/C13
BZX99-A/B/C15
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 2 V
V
R
= 2 V
V
R
= 2 V
V
R
= 2 V
V
R
= 3 V
V
R
= 3 V
V
R
= 4 V
V
R
= 5 V
V
R
= 5 V
V
R
= 5 V
V
R
= 6 V
V
R
= 7 V
V
R
= 7 V
V
R
= 8 V
V
R
= 9 V
V
R
= 10 V
V
R
= 10.5 V
0.2
0.05
0.02
2
1
0.5
0.1
2
1
1
0.1
0.01
0.1
0.2
0.1
0.1
0.05
0.05
0.05
0.01
CONDITIONS
I
F
= 10 mA; see Fig.4
I
F
= 100 mA; see Fig.4
0.9
1
PARAMETER
continuous forward current
non-repetitive peak reverse current t
p
= 100
µs;
square wave;
T
amb
= 25
°C
prior to surge
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
CONDITIONS
−
MIN.
BZX99 series
MAX.
300
UNIT
mA
see Table 1
−
−65
−
300
+150
150
mW
°C
°C
MAX.
V
V
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
UNIT
1999 May 31
3
Philips Semiconductors
Product specification
Voltage regulator diodes
Table 1
Per type BZX99-C2V4 to C15
T
j
= 25
°C
unless otherwise specified.
WORKING VOLTAGE
V
Z
(V)
at I
Z
= 50
µA
Tol.
±5%
MIN.
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
Note
1.
∆V
Z
= V
Z
at 100
µA
minus V
Z
at 10
µA
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Notes
1. Device mounted on an FR4 printed circuit-board.
2. Solderpoint of cathode tab.
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to solderpoint
CONDITIONS
note 1
note 2
2.28
2.57
2.85
3.14
3.42
3.71
4.09
4.47
4.85
5.32
5.89
6.46
7.13
7.79
8.65
9.50
10.45
11.40
12.35
14.25
MAX.
2.52
2.84
3.15
3.47
3.78
4.10
4.52
4.94
5.36
5.88
6.51
7.14
7.88
8.61
9.56
10.50
11.55
12.60
13.65
15.75
MAX.
0.80
0.85
0.90
0.93
0.95
0.97
0.99
0.97
0.60
0.20
0.10
0.10
0.15
0.15
0.10
0.10
0.11
0.12
0.13
0.15
−1.15
−1.35
−1.50
−1.65
−1.80
−1.95
−2.05
−1.90
−0.15
1.75
2.35
3.00
3.60
4.25
5.00
5.80
6.70
7.65
8.60
10.50
VOLTAGE
CHANGE
∆V
Z
(V)
(1)
TEMP. COEFF.
S
Z
(mV/K)
I
Ztest
= 50
µA
(see Figs 2 and 3)
TYP.
370
350
325
310
300
290
280
275
300
275
250
215
170
150
120
110
110
105
105
100
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
V
R
= 0 V
MAX.
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
5.0
4.0
3.0
3.0
3.0
3.0
3.0
3.0
2.5
2.5
2.5
2.0
BZX99 series
BZX99-C
XXX
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A)
at t
p
= 100
µs;
T
amb
= 25
°C
MAX.
VALUE
415
195
UNIT
K/W
K/W
1999 May 31
4
Philips Semiconductors
Product specification
Voltage regulator diodes
GRAPHICAL DATA
BZX99 series
MGL741
handbook, full pagewidth
0
Sz
(mV/K)
−0.5
−1
C2V4
C3V0
C3V3
C3V6
C3V9
−1.5
−2
C4V3
C4V7
−2.5
10
T
j
= 25 to 150
°C.
10
2
Iz (µA)
10
3
Fig.2 Temperature coefficient as a function of working current; typical values.
handbook, halfpage
12
MGL742
MBG781
handbook, halfpage
300
Sz
(mV/K)
8
C15
IF
(mA)
C12
C10
200
4
C8V2
C6V8
C6V2
C5V6
100
0
C5V1
−4
10
10
2
Iz (µA)
10
3
0
0.6
0.8
VF (V)
1.0
T
j
= 25 to 150
°C.
T
j
= 25
°C.
Fig.3
Temperature coefficient as a function of
working current; typical values.
Fig.4
Forward current as a function of forward
voltage; typical values.
1999 May 31
5
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