Philips Semiconductors
Product specification
Dual buffer/line driver; 3-state
FEATURES
•
Wide supply voltage range from 2.0 to 6.0 V
•
Symmetrical output impedance
•
High noise immunity
•
Low power dissipation
•
Balanced propagation delays
•
Very small 8 pins package
•
Output capability: bus driver
•
ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V.
•
Specified from
−40
to +85
°C
and
−40
to +125
°C.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°C;
t
r
= t
f
≤
6.0 ns.
74HC2G125; 74HCT2G125
DESCRIPTION
The 74HC2G/HCT2G125 is a high-speed Si-gate CMOS
device.
The 74HC2G/HCT2G125 provides one non-inverting
buffer/line driver with 3-state output. The 3-state output is
controlled by the output enable input pin (OE). A HIGH at
pin OE causes the output to assume a high-impedance
OFF-state.
The bus driver output currents are equal compared to the
74HC/HCT125.
TYPICAL
SYMBOL
t
PHL
/t
PLH
C
I
C
O
C
PD
PARAMETER
propagation delay nA to nY
input capacitance
output capacitance
power dissipation capacitance per
buffer
output enabled; notes 1 and 2
output disabled; notes 1 and 2
CONDITIONS
HC2G
C
L
= 15 pF; V
CC
= 5 V
10
1.0
1.5
11
1
HCT2G
12
1.0
1.5
11
1
ns
pF
pF
pF
pF
UNIT
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
×
N +
Σ(C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts;
N = total switching outputs;
Σ(C
L
×
V
CC2
×
f
o
) = sum of the outputs.
2. For 74HC2G125 the condition is V
I
= GND to V
CC
.
For 74HCT2G125 the condition is V
I
= GND to V
CC
−
1.5 V.
2003 Mar 03
2
Philips Semiconductors
Product specification
Dual buffer/line driver; 3-state
RECOMMENDED OPERATING CONDITIONS
74HC2G125; 74HCT2G125
74HC2G125
SYMBOL
V
CC
V
I
V
O
T
amb
PARAMETER
supply voltage
input voltage
output voltage
operating ambient
temperature
input rise and fall times
CONDITIONS
MIN.
2.0
0
0
see DC and AC
−40
characteristics per
device
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
−
−
−
TYP.
5.0
−
−
+25
MAX.
6.0
V
CC
V
CC
+125
74HCT2G125
UNIT
MIN.
4.5
0
0
−40
TYP.
5.0
−
−
+25
MAX.
5.5
V
CC
V
CC
+125
V
V
V
°C
t
r
, t
f
−
6.0
−
1000
500
400
−
−
−
−
6.0
−
−
500
−
ns
ns
ns
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
I
IK
I
OK
I
O
I
CC
, I
GND
T
stg
P
D
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 110
°C
the value of P
D
derates linearly with 8 mW/K.
PARAMETER
supply voltage
input diode current
output diode current
output source or sink
current
V
CC
or GND current
storage temperature
power dissipation per
package
for temperature range from
−40
to +125
°C;
note 2
V
I
<
−0.5
V or V
I
> V
CC
+ 0.5 V; note 1
V
O
<
−0.5
V or V
O
> V
CC
+ 0.5 V; note 1
−0.5
V < V
O
< V
CC
+ 0.5 V; note 1
note 1
CONDITIONS
−
−
−
−
−65
−
MIN.
−0.5
MAX.
+7.0
±20
±20
25
50
+150
300
V
mA
mA
mA
mA
°C
mW
UNIT
2003 Mar 03
5
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