Power Field-Effect Transistor, 88A I(D), 55V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, MP-25ZJ, TO-263, 3 PIN
| Parameter Name | Attribute value |
| Maker | NEC Electronics |
| package instruction | LEAD FREE, MP-25ZJ, TO-263, 3 PIN |
| Reach Compliance Code | unknown |
| Is Samacsys | N |
| Avalanche Energy Efficiency Rating (Eas) | 562 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 55 V |
| Maximum drain current (ID) | 88 A |
| Maximum drain-source on-resistance | 0.0068 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-263AB |
| JESD-30 code | R-PSSO-G2 |
| JESD-609 code | e3 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 352 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | TIN |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |

| NP88N055ELE-E1-AY | NP88N055KLE-E1-AY | NP88N055KLE-E2-AY | NP88N055MLE-S18-AY | NP88N055DLE-S12-AY | NP88N055NLE-S18-AY | NP88N055ELE-E2-AY | NP88N055CLE-S12-AZ | |
|---|---|---|---|---|---|---|---|---|
| Description | Power Field-Effect Transistor, 88A I(D), 55V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, MP-25ZJ, TO-263, 3 PIN | Power Field-Effect Transistor, 88A I(D), 55V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, MP-25ZK, TO-263, 3 PIN | Power Field-Effect Transistor, 88A I(D), 55V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, MP-25ZK, TO-263, 3 PIN | Power Field-Effect Transistor, 88A I(D), 55V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, MP-25K, TO-220, 3 PIN | Power Field-Effect Transistor, 88A I(D), 55V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, MP-25, TO-262, 3 PIN | Power Field-Effect Transistor, 88A I(D), 55V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, MP-25SK, TO-262, 3 PIN | Power Field-Effect Transistor, 88A I(D), 55V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, MP-25ZJ, TO-263, 3 PIN | Power Field-Effect Transistor, 88A I(D), 55V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, MP-25, TO-220, 3 PIN |
| Maker | NEC Electronics | NEC Electronics | NEC Electronics | NEC Electronics | NEC Electronics | NEC Electronics | NEC Electronics | NEC Electronics |
| package instruction | LEAD FREE, MP-25ZJ, TO-263, 3 PIN | LEAD FREE, MP-25ZK, TO-263, 3 PIN | LEAD FREE, MP-25ZK, TO-263, 3 PIN | LEAD FREE, MP-25K, TO-220, 3 PIN | LEAD FREE, MP-25, TO-262, 3 PIN | LEAD FREE, MP-25SK, TO-262, 3 PIN | LEAD FREE, MP-25ZJ, TO-263, 3 PIN | LEAD FREE, MP-25, TO-220, 3 PIN |
| Reach Compliance Code | unknown | unknown | unknown | compliant | unknown | compliant | unknown | unknown |
| Avalanche Energy Efficiency Rating (Eas) | 562 mJ | 562 mJ | 562 mJ | 562 mJ | 562 mJ | 562 mJ | 562 mJ | 562 mJ |
| Shell connection | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 55 V | 55 V | 55 V | 55 V | 55 V | 55 V | 55 V | 55 V |
| Maximum drain current (ID) | 88 A | 88 A | 88 A | 88 A | 88 A | 88 A | 88 A | 88 A |
| Maximum drain-source on-resistance | 0.0068 Ω | 0.0068 Ω | 0.0068 Ω | 0.0068 Ω | 0.0068 Ω | 0.0068 Ω | 0.0068 Ω | 0.0068 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-263AB | TO-263AB | TO-263AB | TO-220AB | TO-262AA | TO-262AA | TO-263AB | TO-220AB |
| JESD-30 code | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSFM-T3 | R-PSIP-T3 | R-PSIP-T3 | R-PSSO-G2 | R-PSFM-T3 |
| JESD-609 code | e3 | e3 | e3 | e3 | e3 | e3 | e3 | e1 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 3 | 3 | 3 | 2 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | FLANGE MOUNT | IN-LINE | IN-LINE | SMALL OUTLINE | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 352 A | 352 A | 352 A | 352 A | 352 A | 352 A | 352 A | 352 A |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | NO | NO | NO | YES | NO |
| Terminal surface | TIN | TIN | TIN | MATTE TIN | TIN | MATTE TIN | TIN | TIN SILVER COPPER |
| Terminal form | GULL WING | GULL WING | GULL WING | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | GULL WING | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |