NP82N055KHE-E1-AY datasheet, PDF

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NP82N055KHE-E1-AY: DescriptionPower Field-Effect Transistor, 82A I(D), 55V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, MP-25ZK, TO-263, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size207KB，10 Pages; ManufacturerNEC Electronics

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NP82N055KHE-E1-AY Overview

Power Field-Effect Transistor, 82A I(D), 55V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, MP-25ZK, TO-263, 3 PIN

NP82N055KHE-E1-AY Parametric

Parameter Name	Attribute value
Maker	NEC Electronics
package instruction	LEAD FREE, MP-25ZK, TO-263, 3 PIN
Reach Compliance Code	unknown
Is Samacsys	N
Avalanche Energy Efficiency Rating (Eas)	289 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V
Maximum drain current (ID)	82 A
Maximum drain-source on-resistance	0.0086 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	300 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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DATA SHEET

MOS FIELD EFFECT TRANSISTOR

NP82N055EHE, NP82N055KHE

NP82N055CHE, NP82N055DHE, NP82N055MHE, NP82N055NHE

SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

<R>

ORDERING INFORMATION

PART NUMBER

NP82N055EHE-E1-AY

NP82N055EHE-E2-AY

NP82N055KHE-E1-AY

NP82N055KHE-E2-AY

Note1, 2

Note1

Note1, 2

Note1

LEAD PLATING

PACKING

PACKAGE

TO-263 (MP-25ZJ) typ. 1.4 g

Pure Sn (Tin)

Tape 800 p/reel

TO-263 (MP-25ZK) typ. 1.5 g

NP82N055CHE-S12-AZ

NP82N055DHE-S12-AY

NP82N055MHE-S18-AY

NP82N055NHE-S18-AY

Sn-Ag-Cu

Tube 50 p/tube

TO-220 (MP-25) typ. 1.9 g

TO-262 (MP-25 Fin Cut) typ. 1.8 g

TO-220 (MP-25K) typ. 1.9 g

TO-262 (MP-25SK) typ. 1.8 g

Pure Sn (Tin)

Notes 1.

Pb-free (This product does not contain Pb in the external electrode.)

Not for new design

(TO-220)

FEATURES

•

Channel temperature 175 degree rated

•

Super low on-state resistance

DS(on)

= 8.6 mΩ MAX. (V

= 10 V, I

= 41 A)

•

Low input capacitance

iss

= 3500 pF TYP.

•

Built-in gate protection diode

(TO-262)

(TO-263)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D14138EJ6V0DS00 (6th edition)

Date Published October 2007 NS

Printed in Japan

1999, 2007

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

NP82N055KHE-E1-AY Related Products

	NP82N055KHE-E1-AY	NP82N055MHE-S18-AY	NP82N055EHE-E1-AY	NP82N055NHE-S18-AY	NP82N055CHE-S12-AZ	NP82N055EHE-E2-AY	NP82N055DHE-S12-AY	NP82N055KHE-E2-AY
Description	Power Field-Effect Transistor, 82A I(D), 55V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, MP-25ZK, TO-263, 3 PIN	Power Field-Effect Transistor, 82A I(D), 55V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, MP-25K, TO-220, 3 PIN	Power Field-Effect Transistor, 82A I(D), 55V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, MP-25ZJ, TO-263, 3 PIN	Power Field-Effect Transistor, 82A I(D), 55V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, MP-25SK, TO-262, 3 PIN	Power Field-Effect Transistor, 82A I(D), 55V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, MP-25, TO-220, 3 PIN	Power Field-Effect Transistor, 82A I(D), 55V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, MP-25ZJ, TO-263, 3 PIN	Power Field-Effect Transistor, 82A I(D), 55V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, MP-25, TO-262, 3 PIN	Power Field-Effect Transistor, 82A I(D), 55V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, MP-25ZK, TO-263, 3 PIN
Maker	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics
package instruction	LEAD FREE, MP-25ZK, TO-263, 3 PIN	LEAD FREE, MP-25K, TO-220, 3 PIN	LEAD FREE, MP-25ZJ, TO-263, 3 PIN	LEAD FREE, MP-25SK, TO-262, 3 PIN	LEAD FREE, MP-25, TO-220, 3 PIN	LEAD FREE, MP-25ZJ, TO-263, 3 PIN	LEAD FREE, MP-25, TO-262, 3 PIN	LEAD FREE, MP-25ZK, TO-263, 3 PIN
Reach Compliance Code	unknown	compliant	unknown	compliant	unknown	unknown	unknown	unknown
Avalanche Energy Efficiency Rating (Eas)	289 mJ	289 mJ	289 mJ	289 mJ	289 mJ	289 mJ	289 mJ	289 mJ
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V	55 V	55 V	55 V	55 V	55 V	55 V	55 V
Maximum drain current (ID)	82 A	82 A	82 A	82 A	82 A	82 A	82 A	82 A
Maximum drain-source on-resistance	0.0086 Ω	0.0086 Ω	0.0086 Ω	0.0086 Ω	0.0086 Ω	0.0086 Ω	0.0086 Ω	0.0086 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB	TO-220AB	TO-263AB	TO-262AA	TO-220AB	TO-263AB	TO-262AA	TO-263AB
JESD-30 code	R-PSSO-G2	R-PSFM-T3	R-PSSO-G2	R-PSIP-T3	R-PSFM-T3	R-PSSO-G2	R-PSIP-T3	R-PSSO-G2
JESD-609 code	e3	e3	e3	e3	e1	e3	e3	e3
Number of components	1	1	1	1	1	1	1	1
Number of terminals	2	3	2	3	3	2	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	FLANGE MOUNT	SMALL OUTLINE	IN-LINE	FLANGE MOUNT	SMALL OUTLINE	IN-LINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	300 A	300 A	300 A	300 A	300 A	300 A	300 A	300 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	NO	YES	NO	NO	YES	NO	YES
Terminal surface	TIN	MATTE TIN	TIN	MATTE TIN	TIN SILVER COPPER	TIN	TIN	TIN
Terminal form	GULL WING	THROUGH-HOLE	GULL WING	THROUGH-HOLE	THROUGH-HOLE	GULL WING	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON

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