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BDT65AF

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size147KB,7 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BDT65AF Overview

Transistor,

BDT65AF Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
Is SamacsysN
Maximum collector current (IC)12 A
ConfigurationDARLINGTON
Minimum DC current gain (hFE)1000
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)22 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)10 MHz
Base Number Matches1
This Material Copyrighted By Its Respective Manufacturer

BDT65AF Related Products

BDT65AF BDT65CF
Description Transistor, Transistor,
Is it Rohs certified? incompatible incompatible
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknown unknown
Is Samacsys N N
Maximum collector current (IC) 12 A 12 A
Configuration DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 1000 1000
JESD-609 code e0 e0
Maximum operating temperature 150 °C 150 °C
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 22 W 22 W
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 10 MHz 10 MHz
Base Number Matches 1 1
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