Philips Semiconductors
Product specification
Inverting Schmitt-triggers
FEATURES
•
Wide supply voltage range from 2.0 to 6.0 V
•
High noise immunity
•
Low power dissipation
•
Balanced propagation delays
•
Unlimited input rise and fall times
•
Very small 8 pins package
•
ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V.
•
Specified from
−40
to +85
°C
and
−40
to +125
°C.
DESCRIPTION
APPLICATIONS
74HC3G14; 74HCT3G14
•
Wave and pulse shapers for highly noisy environments
•
Astable multivibrators
•
Monostable multivibrators
•
Output capability: standard.
The 74HC3G/HCT3G14 is a high-speed Si-gate CMOS
device.
The 74HC3G/HCT3G14 provides three inverting buffers
with Schmitt-trigger action. This device is capable of
transforming slowly changing input signals into sharply
defined, jitter-free output signals.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°C;
t
r
= t
f
≤
6.0 ns.
TYPICAL
SYMBOL
t
PHL
/t
PLH
C
I
C
PD
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
×
N +
Σ(C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts;
N = total switching outputs;
Σ(C
L
×
V
CC2
×
f
o
) = sum of the outputs.
2. For HC3G14 the condition is V
I
= GND to V
CC
.
For HCT3G14 the condition is V
I
= GND to V
CC
−
1.5 V.
PARAMETER
propagation delay nA to nY
input capacitance
power dissipation capacitance per buffer
notes 1 and 2
CONDITIONS
HC3G14
C
L
= 50 pF; V
CC
= 4.5 V 16
2
10
HCT3G14
21
2
10
ns
pF
pF
UNIT
2003 Nov 04
2
Philips Semiconductors
Product specification
Inverting Schmitt-triggers
RECOMMENDED OPERATING CONDITIONS
74HC3G14
SYMBOL
V
CC
V
I
V
O
T
amb
PARAMETER
supply voltage
input voltage
output voltage
operating ambient
temperature
CONDITIONS
MIN.
2.0
0
0
see DC and AC
−40
characteristics per
device
TYP.
5.0
−
−
+25
74HC3G14; 74HCT3G14
74HCT3G14
UNIT
MIN.
4.5
0
0
−40
TYP.
5.0
−
−
+25
MAX.
5.5
V
CC
V
CC
+125
V
V
V
°C
MAX.
6.0
V
CC
V
CC
+125
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
I
IK
I
OK
I
O
I
CC
T
stg
P
D
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 110
°C
the value of P
D
derates linearly with 8 mW/K.
PARAMETER
supply voltage
input diode current
output diode current
output source or sink current
V
CC
or GND current
storage temperature
power dissipation
T
amb
=
−40
to +125
°C;
note 2
V
I
<
−0.5
V or V
I
> V
CC
+ 0.5 V; note 1
V
O
<
−0.5
V or V
O
> V
CC
+ 0.5 V; note 1
−0.5
V < V
O
< V
CC
+ 0.5 V; note 1
note 1
CONDITIONS
MIN.
−0.5
−
−
−
−
−65
−
MAX.
+7.0
±20
±20
25
50
+150
300
UNIT
V
mA
mA
mA
mA
°C
mW
2003 Nov 04
5
Embedded System
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