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FXT455STZ

Description
Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size26KB,1 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Download Datasheet Parametric Compare View All

FXT455STZ Overview

Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

FXT455STZ Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerZetex Semiconductors
package instructionIN-LINE, R-PSIP-W3
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)1 A
Collector-emitter maximum voltage140 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PSIP-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.7 V
Base Number Matches1
NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 – SEPT 93
FEATURES
* 140 Volt V
CEO
* 1 Amp continuous current
* P
tot
= 1 Watt
FXT455
B
C
E
REFER TO ZTX455 FOR GRAPHS
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
160
140
5
2
1
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
SYMBOL
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
MIN.
160
140
5
0.1
0.1
0.7
100
100
15
3-34
300
MHz
pF
TYP.
MAX.
UNIT
V
V
V
µ
A
µ
A
CONDITIONS.
I
C
=100
µ
A, I
E
=0
I
C
=10mA, I
B
=0*
I
E
=100
µ
A, I
C
=0
V
CB
=140V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=150mA, I
B
=15mA*
I
C
=150mA, V
CE
=10V*
I
C
=1A, V
CE
=10V*
I
C
=50mA, V
CE
=10V
f=100MHz
V
CB
=10V, f=1MHz
Emitter Cut-Off Current I
EBO
Collector-Emitter
Saturation Voltage
V
CE(sat)
V
Static Forward Current h
FE
Transfer Ratio
Transition
Frequency
Output Capacitance
f
T
C
obo
10
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
2%

FXT455STZ Related Products

FXT455STZ FXT455STOB FXT455STOA
Description Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Is it Rohs certified? incompatible incompatible incompatible
Maker Zetex Semiconductors Zetex Semiconductors Zetex Semiconductors
package instruction IN-LINE, R-PSIP-W3 IN-LINE, R-PSIP-W3 IN-LINE, R-PSIP-W3
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Is Samacsys N N N
Maximum collector current (IC) 1 A 1 A 1 A
Collector-emitter maximum voltage 140 V 140 V 140 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 100 100 100
JESD-30 code R-PSIP-W3 R-PSIP-W3 R-PSIP-W3
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 200 °C 200 °C 200 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE
Polarity/channel type NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE WIRE
Terminal location SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz
VCEsat-Max 0.7 V 0.7 V 0.7 V
Base Number Matches 1 1 1
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