SILICON
NPN TRANSISTOR
BFY52
•
•
•
V(BR)CEO = 20V (Min).
Hermetic TO-39 Metal Package.
Ideally Suited General Purpose Amplifier Applications
Screening Options Available
•
•
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
PD
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
TA = 25°C
Total Power Dissipation at
Derate Above 25°C
TC = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
40V
20V
6V
1.0A
0.8W
4.57mW/°C
5W
28.6mW/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJA
R
θJC
Parameters
Thermal Resistance, Junction To Ambient
Thermal Resistance, Junction To Case
Max.
218.75
35
Units
°C/W
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 9729
Issue 1
Page 1 of 3
Website:
http://www.semelab-tt.com
SILICON
NPN TRANSISTOR
BFY52
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols
V(BR)CEO
(1)
Parameters
Collector-Emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Test Conditions
IC = 10mA
IC = 10µA
IE = 10µA
VCB = 30V
IB = 0
IE = 0
IC = 0
IE = 0
TA = 100°C
VEB = 5V
IC = 0
TA = 100°C
IC = 10mA
VCE = 6V
VCE = 6V
VCE = 6V
IB = 15mA
IB = 100mA
IB = 100mA
Min.
20
40
6
Typ
Max.
Units
V(BR)CBO
V(BR)EBO
ICBO
V
50
2.5
50
2.8
30
60
15
0.35
1.6
2
nA
µA
nA
µA
IEBO
Emitter Cut-Off Current
hFE
(1)
Forward-current transfer
ratio
IC = 150mA
IC = 1.0A
VCE(sat)
VBE(sat)
(1)
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
IC = 150mA
IC = 1.0A
IC = 1.0A
V
(1)
DYNAMIC CHARACTERISTICS
hfe
Small-Signal Current Gain
IC = 1.0mA
f = 1.0KHz
Transition Frequency
IC = 50mA
f = 20MHz
Output Capacitance
VCB = 12V
f = 1.0MHz
IE = 0
12
pF
VCE = 6V
50
MHz
VCE = 6V
30
fT
Cobo
Notes
(1) Pulse Width
≤
380us,
δ ≤
2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 9729
Issue 1
Page 2 of 3
SILICON
NPN TRANSISTOR
BFY52
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
12.70
(0.500)
min.
0.89
max.
(0.035)
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
2
1
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
3
45°
TO-39 (TO-205AD) METAL PACKAGE
Underside View
Pin 1 - Emitter
Pin 2 - Base
Pin 3 - Collector
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 9729
Issue 1
Page 3 of 3
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