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BYT43D

Description
Rectifier Diode, 1 Element, 1A, 200V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size78KB,2 Pages
ManufacturerGalaxy Microelectronics
Environmental Compliance
Download Datasheet Parametric View All

BYT43D Overview

Rectifier Diode, 1 Element, 1A, 200V V(RRM),

BYT43D Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Microelectronics
Reach Compliance Codeunknown
Is SamacsysN
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.6 V
Maximum non-repetitive peak forward current30 A
Number of components1
Maximum operating temperature150 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.05 µs
surface mountNO
Base Number Matches1
BL
FEATURES
GALAXY ELECTRICAL
BYT43A--- BYT43M
VOLTAGE RANGE:
50
--- 1000 V
CURRENT: 1.0 A
SUPER FAST RECTIFIERS
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
DO -
15
MECHANICAL DATA
Case: JEDEC DO-15,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight:
0.014
ounces,0.39 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%.
BYT
43A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
10
mm lead length,
@T
A
=75
BYT
43B
100
70
100
BYT
43D
200
140
200
BYT
43G
400
280
400
1.0
BYT
43J
600
420
600
BYT BYT
43K 43M
800
560
800
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
10ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
30.0
A
Maximum instantaneous forw ard voltage
@ 1.0A
Maximum reverse current
@T
A
=25
V
F
I
R
t
rr
R
θJA
T
J
T
STG
1.6
5.0
150.0
50
60
- 55 ----- + 150
- 55 ----- + 150
2.0
V
A
at rated DC blocking voltage @T
A
=100
Maximum reverse recovery time (Note1)
Typical thermal resistance
(Note2)
75
ns
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2.
Thermal resistance f rom junction to ambient,lead
length l=10mm,T
L
=constant.
www.galaxycn.com
Document Number 0264039
BL
GALAXY ELECTRICAL
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