BUZ907 datasheet, PDF - EEWORLD Datasheet

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BUZ907: Description8A, 220V, P-CHANNEL, Si, POWER, MOSFET, TO-3; CategoryDiscrete semiconductor The transistor; File Size26KB，2 Pages; ManufacturerSEMELAB

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BUZ907 Overview

8A, 220V, P-CHANNEL, Si, POWER, MOSFET, TO-3

BUZ907 Parametric

Parameter Name	Attribute value
Maker	SEMELAB
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	220 V
Maximum drain current (ID)	8 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	P-CHANNEL
Maximum pulsed drain current (IDM)	8 A
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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MAGNA

TEC

25.0

+0.1

-0.15

BUZ907

BUZ908

MECHANICAL DATA

Dimensions in mm

P–CHANNEL

POWER MOSFET

8.7 Max.

1.50

Typ.

11.60

± 0.3

10.90 ± 0.1

POWER MOSFETS FOR

AUDIO APPLICATIONS

30.2 ± 0.15

Ø 20 M ax.

39.0 ± 1.1

16.9 ± 0.15

Ø 1.0

FEATURES

• HIGH SPEED SWITCHING

• SEMEFAB DESIGNED AND DIFFUSED

• HIGH VOLTAGE (220V & 250V)

• HIGH ENERGY RATING

R 4.0 ± 0.1

R 4.4 ± 0.2

• ENHANCEMENT MODE

• INTEGRAL PROTECTION DIODES

• COMPLIMENTARY N–CHANNEL

BUZ902 & BUZ903

Case – Source

TO–3

Pin 1 – Gate

Pin 2 – Drain

ABSOLUTE MAXIMUM RATINGS

case

= 25°C unless otherwise stated)

DSX

Drain – Source Voltage

GSS

D(PK)

stg

θJC

Gate – Source Voltage

Continuous Drain Current

Body Drain Diode

Total Power Dissipation

Storage Temperature Range

Maximum Operating Junction Temperature

Thermal Resistance Junction – Case

@ T

case

= 25°C

BUZ907

-220V

±14V

-8A

125W

–55 to 150°C

150°C

1°C/W

BUZ908

-250V

Magnatec.

Telephone (01455) 554711. Fax (01455) 558843

Prelim. 01/97

BUZ907 Related Products

	BUZ907	BUZ908
Description	8A, 220V, P-CHANNEL, Si, POWER, MOSFET, TO-3	8A, 250V, P-CHANNEL, Si, POWER, MOSFET, TO-3
Maker	SEMELAB	SEMELAB
package instruction	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Is Samacsys	N	N
Shell connection	SOURCE	SOURCE
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	220 V	250 V
Maximum drain current (ID)	8 A	8 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-3	TO-3
JESD-30 code	O-MBFM-P2	O-MBFM-P2
Number of components	1	1
Number of terminals	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	METAL	METAL
Package shape	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	P-CHANNEL	P-CHANNEL
Maximum pulsed drain current (IDM)	8 A	8 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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