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BUZ907D

Description
16A, 220V, P-CHANNEL, Si, POWER, MOSFET, TO-3
CategoryDiscrete semiconductor    The transistor   
File Size26KB,2 Pages
ManufacturerSEMELAB
Download Datasheet Parametric Compare View All

BUZ907D Overview

16A, 220V, P-CHANNEL, Si, POWER, MOSFET, TO-3

BUZ907D Parametric

Parameter NameAttribute value
MakerSEMELAB
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage220 V
Maximum drain current (ID)16 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)16 A
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
MAGNA
TEC
25.0
+0.1
-0.15
BUZ907D
BUZ908D
MECHANICAL DATA
Dimensions in mm
P–CHANNEL
POWER MOSFET
8.7 Max.
1.50
Typ.
11.60
± 0.3
10.90 ± 0.1
POWER MOSFETS FOR
AUDIO APPLICATIONS
30.2 ± 0.15
Ø 20 M ax.
39.0 ± 1.1
16.9 ± 0.15
1
2
Ø 1.0
FEATURES
• HIGH SPEED SWITCHING
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (220V & 250V)
• HIGH ENERGY RATING
R 4.0 ± 0.1
R 4.4 ± 0.2
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODES
• COMPLIMENTARY N–CHANNEL
BUZ902D & BUZ903D
Case – Source
TO–3
Pin 1 – Gate
Pin 2 – Drain
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
DSX
Drain – Source Voltage
V
GSS
I
D
I
D(PK)
P
D
T
stg
T
j
R
θJC
Gate – Source Voltage
Continuous Drain Current
Body Drain Diode
Total Power Dissipation
Storage Temperature Range
Maximum Operating Junction Temperature
Thermal Resistance Junction – Case
@ T
case
= 25°C
BUZ907D
-220V
±14V
-16A
-16A
250W
–55 to 150°C
150°C
0.5°C/W
BUZ908D
-250V
Magnatec.
Telephone (01455) 554711. Fax (01455) 552612.
Prelim. 01/97

BUZ907D Related Products

BUZ907D BUZ908D
Description 16A, 220V, P-CHANNEL, Si, POWER, MOSFET, TO-3 16A, 250V, P-CHANNEL, Si, POWER, MOSFET, TO-3
Maker SEMELAB SEMELAB
package instruction FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Is Samacsys N N
Shell connection SOURCE SOURCE
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 220 V 250 V
Maximum drain current (ID) 16 A 16 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-3 TO-3
JESD-30 code O-MBFM-P2 O-MBFM-P2
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material METAL METAL
Package shape ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type P-CHANNEL P-CHANNEL
Maximum pulsed drain current (IDM) 16 A 16 A
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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