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BUZ908DP

Description
Power Field-Effect Transistor, 16A I(D), 250V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PBL, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size63KB,1 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Download Datasheet Parametric View All

BUZ908DP Overview

Power Field-Effect Transistor, 16A I(D), 250V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PBL, 3 PIN

BUZ908DP Parametric

Parameter NameAttribute value
MakerTT Electronics plc
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage250 V
Maximum drain current (ID)16 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)16 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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