DISCRETE SEMICONDUCTORS
DATA SHEET
M3D126
BCY87; BCY88; BCY89
NPN general purpose transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jun 20
Philips Semiconductors
Product specification
NPN general purpose transistors
FEATURES
•
Low current (max. 30 mA)
•
Low voltage (max. 45 V).
APPLICATIONS
•
Differential amplifier applications in general industrial
service e.g. instrumentation and control
•
The BCY87 and BCY88 are intended for use in
pre-stages of differential amplifiers where low offset, low
drift and low noise are of prime importance
•
The BCY89 is intended for use in second stages of
differential amplifiers, long-tailed pairs and more general
applications.
DESCRIPTION
Matched dual NPN transistors in a TO-71; SOT31 metal
package. Products are divided into 3 types according to
their matching accuracy.
6
5
4
BCY87; BCY88; BCY89
PINNING
PIN
(1)
1
2
3
4
5
6
Note
1. All leads insulated from the case.
DESCRIPTION
emitter TR1
emitter TR2
collector TR2
basis TR2
basis TR1
collector TR1
handbook, halfpage
6
1
2
3
4
2
TR2
TR1
MAM351
1
5
3
Fig.1
Simplified outline (TO-71; SOT31)
and symbol.
QUICK REFERENCE DATA
SYMBOL
Per transistor
V
CBO
V
CEO
P
tot
h
FE
collector-base voltage
collector-emitter voltage
total power dissipation
DC current gain
BCY87
BCY88
BCY89
h
FE
f
T
DC current gain
transition frequency
open emitter
open base
T
amb
≤
25
°C
V
CE
= 10 V
I
C
= 5
µA
I
C
= 500
µA
I
C
= 10 mA
I
C
= 50
µA;
V
CE
= 10 V
I
C
=
−50 µA;
V
CE
= 10 V; f = 100 MHz
I
C
=
−500 µA;
V
CE
= 10 V; f = 100 MHz
80
120
100
100
10
50
−
600
600
450
−
−
MHz
MHz
−
−
−
45
40
150
V
V
mW
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
1997 Jun 20
2
Philips Semiconductors
Product specification
NPN general purpose transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
T
amb
≤
25
°C
CONDITIONS
open emitter
open base
open collector
BCY87; BCY88; BCY89
MIN.
−
−
−
−
−
−65
−
MAX.
45
40
5
30
150
+150
175
V
V
V
UNIT
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air
VALUE
1
UNIT
K/mW
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
Per transistor
I
CBO
collector cut-off current
BCY87
BCY88
I
CBO
h
FE
collector cut-off current
BCY89
DC current gain
BCY87
BCY88
BCY89
h
FE
C
c
f
T
DC current gain
collector capacitance
transition frequency
V
CE
= 10 V
I
C
= 5
µA
I
C
= 500
µA
I
C
= 10 mA
I
C
= 50
µA;
V
CE
= 10 V
I
E
=
−50 µA;
V
CE
= 10 V;
f = 100 MHz
I
E
=
−500 µA;
V
CE
= 10 V;
f = 100 MHz
F
F
noise figure
noise figure
BCY87
BCY88; BCY89
I
C
= 200
µA;
V
CE
= 5 V;
R
S
= 2 kΩ; f = 10 Hz to 15.7 kHz
80
120
100
100
10
50
−
−
−
−
−
−
−
−
−
−
600
600
450
3.5
−
−
4
pF
MHz
MHz
dB
I
E
= 0; V
CB
= 20 V
−
−
10
nA
I
E
= 0; V
CB
= 20 V; T
amb
= 90
°C
−
−
−
−
5
20
nA
nA
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
−
I
C
= 200
µA;
V
CE
= 5 V;
R
S
= 2 kΩ; f = 1 kHz; B = 200 Hz
−
−
−
−
4
5
dB
dB
1997 Jun 20
3
Philips Semiconductors
Product specification
NPN general purpose transistors
BCY87; BCY88; BCY89
SYMBOL
Complete device; note
1
I
1C
------
-
I
2C
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ratio of collector currents
BCY87
BCY88
BCY89
V
1B
−
1E
= V
2B
−
2E
0.9
0.8
0.67
I
1C
= I
2C
−
−
−
V
1B
−
1E
= V
2B
−
2E
−
−
−
I
1C
= I
2C
0.9
0.8
−
−
−
−
−
−
−
−
1
2
4
−
−
−
1.11
1.25
3
6
10
0.5
2
10
µV/K
µV/K
µV/K
nA/K
nA/K
nA/K
−
−
−
25
80
300
nA
nA
nA
−
−
−
3
6
10
mV
mV
mV
−
−
−
1.11
1.25
1.5
V
1B
–
1E
–
V
2B
–
2E
difference between
base-emitter voltages
BCY87
BCY88
BCY89
I
1B
–
I
2B
difference between base
currents
BCY87
BCY88
BCY89
h
1FE
-----------
h
2FE
∆V
-------
-
∆T
DC current gain ratio
BCY87
BCY88
equivalent differential voltage T
amb
=
−20 °C
to +90
°C
BCY87
BCY88
BCY89
∆I
-------
∆T
equivalent differential current T
amb
=
−20 °C
to +90
°C
BCY87
BCY88
BCY89
Note
1. These characteristics are valid under the following conditions:
a) Collector-base voltage of both transistors not exceeding 10 V; (V
1C
−
1B
= V
2C
−
2B
≤
10 V).
b) Sum of the emitter currents from 10 to 100
µA; −(I
1E
+ I
2E
) = 10 to 100
µA.
1997 Jun 20
4
Philips Semiconductors
Product specification
NPN general purpose transistors
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 6 leads
BCY87; BCY88; BCY89
SOT31
j
B
α
seating plane
w
M
A
M
B
M
1
k
2
3
D
1
b
6
5
4
a
A
D
A
L
0
5
scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
A
max.
5.3
a
2.54
b
max.
0.51
D
max.
5.8
D1
max.
4.8
j
max.
1.16
k
max.
1.17
L
min.
12.7
w
0.35
α
45°
OUTLINE
VERSION
SOT31
REFERENCES
IEC
JEDEC
TO-71
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-06-18
1997 Jun 20
5
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