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BFG11/X

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size59KB,12 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BFG11/X Overview

Transistor,

BFG11/X Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
Is SamacsysN
Maximum collector current (IC)0.5 A
ConfigurationSingle
Minimum DC current gain (hFE)25
JESD-609 codee0
Maximum operating temperature175 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.4 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG11; BFG11/X
NPN 2 GHz RF power transistor
Product specification
Supersedes data of November 1992
File under Discrete Semiconductors, SC14
1995 Apr 07
Philips Semiconductors

BFG11/X Related Products

BFG11/X BFG11
Description Transistor, Transistor,
Is it Rohs certified? incompatible incompatible
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknown unknown
Is Samacsys N N
Maximum collector current (IC) 0.5 A 0.5 A
Configuration Single Single
Minimum DC current gain (hFE) 25 25
JESD-609 code e0 e0
Maximum operating temperature 175 °C 175 °C
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.4 W 0.4 W
surface mount YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Base Number Matches 1 1
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