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BUK564-200A

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size55KB,7 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric View All

BUK564-200A Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

BUK564-200A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
Is SamacsysN
ConfigurationSingle
Maximum drain current (Abs) (ID)9.1 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)75 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic
level field-effect power transistor in a
plastic envelope suitable for surface
mount applications.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and in
automotive and general purpose
switching applications.
BUK564-200A
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
T
j
R
DS(ON)
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance;
V
GS
= 5 V
MAX.
200
9.2
90
175
0.4
UNIT
V
A
W
˚C
PINNING - SOT404
PIN
1
2
3
mb
gate
drain
source
drain
DESCRIPTION
PIN CONFIGURATION
mb
SYMBOL
d
g
2
1
3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±V
GS
±V
GSM
I
D
I
D
I
DM
P
tot
T
stg
T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Non-repetitive gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
-
R
GS
= 20 kΩ
-
t
p
50
µs
T
mb
= 25 ˚C
T
mb
= 100 ˚C
T
mb
= 25 ˚C
T
mb
= 25 ˚C
-
-
MIN.
-
-
-
-
-
-
-
-
- 55
-
MAX.
200
200
15
20
9.2
6.5
36
90
175
175
UNIT
V
V
V
V
A
A
A
W
˚C
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
R
th j-a
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
minimum footprint,
FR4 board (see Fig. 18).
-
TYP. MAX.
-
50
1.67
-
UNIT
K/W
K/W
February 1996
1
Rev 1.000
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