Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
PBYL1525CT, PBYL1525CTB series
SYMBOL
QUICK REFERENCE DATA
V
R
= 20 V/ 25 V
I
O(AV)
= 15 A
V
F
≤
0.42 V
a1
1
k 2
a2
3
GENERAL DESCRIPTION
Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power
supplies.
The PBYL1525CT series is supplied in the SOT78 (TO220AB) conventional leaded package.
The PBYL1525CTB series is supplied in the SOT404 surface mounting package.
PINNING
PIN
1
2
3
tab
gate
drain
1
source
DESCRIPTION
SOT78 (TO220AB)
tab
SOT404
tab
2
drain
1 23
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
PBYL15
PBYL15
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified output
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current per diode
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
-
-
T
mb
≤
107 ˚C
square wave;
δ
= 0.5; T
mb
≤
127 ˚C
square wave;
δ
= 0.5; T
mb
≤
127 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; T
j
= 125 ˚C prior to
surge; with reapplied V
RRM(max)
pulse width and repetition rate
limited by T
j max
-
-
-
-
-
-
-
- 65
MIN.
MAX.
20CT
20CTB
20
20
20
15
15
90
100
1
150
175
25CT
25CTB
25
25
25
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
I
RRM
T
j
T
stg
1.
It is not possible to make connection to pin 2 of the SOT404 package.
March 1998
1
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
R
th j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
PBYL1525CT, PBYL1525CTB series
MIN.
-
-
-
-
TYP. MAX. UNIT
-
-
60
50
3
2.5
-
-
K/W
K/W
K/W
K/W
per diode
both diodes
SOT78 package, in free air
SOT404 package, pcb mounted, minimum
footprint, FR4 board
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at T
j
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V
F
Forward voltage
CONDITIONS
I
F
= 7.5 A; T
j
= 150˚C
I
F
= 7.5 A; T
j
= 125˚C
I
F
= 15 A; T
j
= 125˚C
I
F
= 15 A
V
R
= V
RWM
V
R
= V
RWM
; T
j
= 100˚C
V
R
= 5 V; f = 1 MHz, T
j
= 25˚C to 125˚C
MIN.
-
-
-
-
-
-
-
TYP. MAX. UNIT
0.37
0.39
0.57
0.59
0.2
10
350
0.42
0.45
0.61
0.64
5
20
-
V
V
V
V
mA
mA
pF
I
R
C
d
Reverse current
Junction capacitance
March 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYL1525CT, PBYL1525CTB series
8
7
6
5
4
3
Forward dissipation, PF (W)
Vo = 0.29 V
Rs = 0.0213 Ohms
PBYL1525CT
Tmb(max) / C
126
129
100mA
Reverse current, IR (A)
PBYR1045CTD
D = 1.0
0.2
0.1
I
t
p
t
p
D=
T
t
132
135
138
141
144
147
150
12
10mA 125 C
100 C
1mA 75 C
50 C
100uA
Tj = 25 C
0.5
2
1
0
T
0
2
4
6
8
Average forward current, IF(AV) (A)
10
10uA
0
25
Reverse voltage, VR (V)
50
Fig.1. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
PBYL1525CT
1.9
138
Fig.4. Typical reverse leakage current per diode;
I
R
= f(V
R
); parameter T
j
5
4
Forward dissipation, PF (W)
Vo = 0.29 V
Rs = 0.0213 Ohms
4
Tmb(max) / C
a = 1.57
135
1000
Junction capacitance, Cd (pF)
PBYR1025CTD
2.2
2.8
3
2
1
0
141
144
147
150
100
0
1
2
3
4
5
6
Average forward current, IF(AV) (A)
7
8
1
10
Reverse voltage, VR (V)
100
Fig.2. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
Forward current, IF (A)
Tj = 25 C
Tj = 125 C
8
typ
max
PBYR1025CTD
Fig.5. Typical junction capacitance per diode;
C
d
= f(V
R
); f = 1 MHz; T
j
= 25˚C to 125 ˚C.
10
10
Transient thermal impedance, Zth j-mb (K/W)
1
6
0.1
4
0.01
2
P
D
t
p
D=
t
p
T
t
0
0
0.2
0.4
0.6
Forward voltage, VR (V)
0.8
1
0.001
1us
T
10us
100us 1ms
10ms 100ms
1s
10s
pulse width, tp (s)
PBYL1025
Fig.3. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.6. Transient thermal impedance; per diode;
Z
th j-mb
= f(t
p
).
March 1998
3
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
PBYL1525CT, PBYL1525CTB series
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max
1 2 3
(2x)
2,54 2,54
0,9 max (3x)
0,6
2,4
Fig.7. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
March 1998
4
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
10.3 max
PBYL1525CT, PBYL1525CTB series
4.5 max
1.4 max
11 max
15.4
2.5
0.85 max
(x2)
2.54 (x2)
0.5
Fig.8. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.9. SOT404 : soldering pattern for surface mounting.
Notes
1. Epoxy meets UL94 V0 at 1/8".
March 1998
5
Rev 1.000
Microcontroller MCU
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