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Datasheet> All Categories > Discrete semiconductor> The transistor> TN0401L-18
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TN0401L-18

Description
Small Signal Field-Effect Transistor, 0.64A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA,
CategoryDiscrete semiconductor    The transistor   
File Size127KB，4 Pages
ManufacturerTEMIC
Websitehttp://www.temic.de/
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TN0401L-18 Overview

Small Signal Field-Effect Transistor, 0.64A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA,

TN0401L-18 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Is SamacsysN
Other featuresLOW THRESHOLD
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage40 V
Maximum drain current (ID)0.64 A
Maximum drain-source on-resistance1.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)15 pF
JEDEC-95 codeTO-226AA
JESD-30 codeO-PBCY-W3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

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TN0401L-18 Related Products

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Description Small Signal Field-Effect Transistor, 0.64A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, Small Signal Field-Effect Transistor, 0.64A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, Small Signal Field-Effect Transistor, 0.64A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, Small Signal Field-Effect Transistor, 0.64A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, Small Signal Field-Effect Transistor, 0.64A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, Small Signal Field-Effect Transistor, 0.64A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, Small Signal Field-Effect Transistor, 0.64A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, Small Signal Field-Effect Transistor, 0.64A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA,
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
Other features LOW THRESHOLD LOW THRESHOLD LOW THRESHOLD LOW THRESHOLD LOW THRESHOLD LOW THRESHOLD LOW THRESHOLD LOW THRESHOLD
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 40 V 20 V 20 V 20 V 30 V 40 V 40 V 30 V
Maximum drain current (ID) 0.64 A 0.64 A 0.64 A 0.64 A 0.64 A 0.64 A 0.64 A 0.64 A
Maximum drain-source on-resistance 1.2 Ω 1.2 Ω 1.2 Ω 1.2 Ω 1.2 Ω 1.2 Ω 1.2 Ω 1.2 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 15 pF 15 pF 15 pF 15 pF 25 pF 15 pF 15 pF 25 pF
JEDEC-95 code TO-226AA TO-226AA TO-226AA TO-226AA TO-226AA TO-226AA TO-226AA TO-226AA
JESD-30 code O-PBCY-W3 O-PBCY-W3 O-PBCY-W3 O-PBCY-W3 O-PBCY-W3 O-PBCY-W3 O-PBCY-W3 O-PBCY-W3
Number of components 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Maker - TEMIC TEMIC TEMIC TEMIC TEMIC TEMIC TEMIC

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